Jung Han Research Group

Journal Publications

2022

CM Chou, CJ Wang, Y Ke, GY Shiu, YY Chen, KT Chen, YC Chen, H Chen, JH Shao, PL Liu, J Han, CF Lin; Characterizations of AlGaN/GaN Membrane-type Photodetectors, ACS Applied Optical Materials (2022).

RT ElAfandy, C Mi, S Wang, and J Han; A Pathway to Fabricate Gallium Nitride Embedded 3D High‐Index‐Contrast Optical Structures, Advanced Optical Materials (2022).

YM Huang, JH Chen, YH Liou, KJ Singh, WC Tsai, J Han, CJ Lin, TS Kao, CC Lin, SC Chen, and HC Kuo; High-Uniform and High-Efficient Color Conversion Nanoporous GaN-Based Micro-LED Display with Embedded Quantum Dots, NANOMATERIALS (2022).

AS Chang, B Li, S Wang, S Frisone, RS Goldman, J Han, and LJ Lauhon; Unveiling the influence of selective-area-regrowth interfaces on local electronic properties of GaN pn junctions for efficient power devices, Nano Energy (2022).

2021

J Song, J Kang, and J Han; Monolithic RGB micro-light-emitting diodes fabricated with quantum dots embedded inside Nanoporous GaN, ACS Applied Electronic Materials (2021).

B Li, S Wang, M Nami, AM Armstrong, and J Han; Etched-and regrown GaN p-n diodes with low-defect interfaces prepared by on-situ TBCl etching, ACS Applied Materials & Interfaces (2021).

B Li, S Wang, AS CHang, L Lauhon, Y Líu, B Raghothamachar, M Dudley, and J Han; Selective area etching and doping of GaN for high-power applications, ECS Transactions (2021).

H Fu, et al.; Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress, Materials Today (2021).

CF Lin, TY Zhang CJ Wang, YY Chen, GY Shiu, J Han; InGaN resonant microcavity with n+-porous-GaN/p+-GaN tunneling junction, IEEE Electron Device Letters (2021).

J Han, R Elafandy, and K Jang; Development of blue vertical cavity surface emitting lasers (VCSELs) with nonporous GaN, ECS Transactions (2021).

AS Chang, B Li, S Wang M Name, PJM Smeets, J Han, and LJ Lauren; Selective area regrowth produces nonuniform Mg doping profiles in nonplanar GaN p-n junctions, ACS Applied Electronic Materials (2021).

RT Elafandy, JH Kang, C Mi, TK Kim, JS Kwak, and J Han; Study and application of birefringent nonporous GaN in the polarization control of blue vertical-cavity surface-emitting lasers, ACS Photonics (2021).

2020

J Song, J Choi, and J Han; Improving performance of semi polar (20-21) light emitting diodes through reduction of threading dislocations by AlGaN/GaN superlattice interlayer, Journal of Crystal Growth (2020).

J Song, and J Han; High quality, mass-producible semi polar GaN and InGaN light-emitting diodes grown on sapphire, physically status solidi (b) (2020).

CJ WU, CY Kuo, CJ Wang, WE Chang, CL Tsai, CF Lin, and J Han; Deep-UV porous AlGaN distributed Bragg reflectors for deep ultraviolet light-emitting diodes and laser diodes, ACS Applied Nano Materials (2020).

C-J Wu, Y-Y Chen, C-J Wang, G-Y Shiu, C-H Huang, H-J Liu, H. Chen, Y-S Lin, C-F Lin, and J. Han; Anisotropic properties of pipe-GaN distributed Bragg reflectors, Nanoscale Advances (2020).

RT ElAfandy, JH Kang, B Li, TK Kim, JS Kwak, J Han; Room-temperature operation of c-plane GaN vertical cavity surface emitting laser on conductive nanoporous distributed Bragg reflector, Applied Physics Letters (2020).

JH Kang, B Li, T Zhao, M. Johar, CC Lin, YH Fang, WH Kuo, KL Liang, S Hu, SW Ryu, and J Han; RGB arrays for micro-light-emitting diode applications using nanoporous GaN embedded with quantum dots, ACS applied materials & interfaces (2020).

B Li, S Wang, M Nami, and J Han; A study of damage-free in-situ etching of GaN in metalorganic chemical vapor deposition (MOCVD) by tertiarybutylchloride (TBCl), Journal of Crystal Growth (2020).

2019

B. Li, M. Nami, S. Wang and J. Han; In situ and selective area etching of GaN by tertiarybutylchloride (TBCl), Applied Physics Letters (2019).

J. Kang and J. Han; Enabling Technology for MicroLED Display Based on Quantum Dot Color Converter, SID Symposium Digest of Technical Papers (2019).

T. Zhou, C. Zhang, R. ElAfandy, G. Yuan, Z. Deng, K. Xiong, F. Chen, Y. Kuo, K. Xu and J. Han; Thermal transport of nanoporous gallium nitride for photonic applications, Journal of Applied Physics (2019).

M. Kneissl, T. Seong, J. Han and H. Amano; The emergence and prospects of deep-ultraviolet light-emitting diode technologies, Nature Photonics (2019).

C. Zhang, R. ElAfandy, J. Zhang, S. Chen, A. Nurmikko and J. Han; Development of nanopore-based near ultraviolet vertical-cavity surface emitting lasers, Gallium Nitride Materials and Devices XIV (2019).

C. Zhang, R. ElAfandy and J. Han; Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers, Applied Science (2019).

2018

G. Yuan, C. Zhang, K. Xiong and J. Han; InGaN/GaN microdisks enabled by nanoporous GaN cladding, Optics Letters (2018).

C. Zhang, G. Yuan, A. Bruch, K. Xiong, H. Tang and J. Han; Toward quantitative electrochemical nanomachining of III-Nitrides, J. Electrochem. Soc. (2018).

2017

J. Song, J. Han; Nitrogen-Polar (000-1) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer, Materials (2017).

AW Bruch, K. Xiong, H. Jung, X. Guo, C. Zhang, J. Han, HX Tang; Electrochemically sliced low loss AlGaN optical microresonators, Applied Physics Letters (2017).

J. Song, J. Choi, K. Xiong, Y. Xie, J. Cha, J. Han; Semipolar (20-2-1) GaN and InGaN Light-Emitting Diodes Grown on Sapphire, ACS Applied Materials & Interfaces (2017).

C. Zhang, K. Xiong, G. Yuan J. Han; A resonant‐cavity blue–violet light‐emitting diode with conductive nanoporous distributed Bragg reflector, Physica status solidi (a) (2017).

2016

G. Yuan, K. Xiong, C. Zhang, Y. Li, J. Han; Optical Engineering of Modal Gain in III-Nitride Laser with Nanoporous GaN, ACS Photonics (2016).

S. Chen, C. Zhang, J. Lee, J. Han, A. Nurmikko; Hybrid Perovskite Vertical-Cavity Surface-Emitting Laser Deploying Nanoporous GaN Dielectric Reflector Technology, CLEO: Science and Innovations SW1M. 2 (2016).

C. Zhang, G. Yuan, K. Xiong, S.H. Park, J. Han; (Invited) New Directions in GaN Photonics Enabled by Electrochemical Processes, ECS Transactions 72, 47 (2016).

G. Yuan, C. Zhang, K. Xiong, S. Park, J. Han; New directions in GaN photonics, SPIE OPTO 97480Q-97480Q-16 (2016).

B. Leung, D. Wang, Y.S. Kuo, J. Han; Complete orientational access for semipolar GaN devices on sapphire, physica status solidi (b) 253, 23 (2016).

2015

A. W. Bruch, C. Xiong, B. Leung, M. Poot, J. Han, H. X. Tang; Broadband nanophotonic waveguides and resonators based on epitaxial GaN thin films, Applied Physics Letters 14, 141113 (2015).

B. Leung, M. Tsai, J. Song, Y. Zhang, K. Xiong, G. Yuan, M. E. Coltrin, J. Han; Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2, Journal of Crystal Growth 426, 95 (2015).

S. Feng, P. Liao, B. Leung, J. Han, F. Yang, H. Wang; Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes, Journal of Applied Physics 4, 043104 (2015).

C. Zhang, S. H. Park, D. Chen, D. Lin, W. Xiong, H. Kuo, C. Lin, H. Cao, J. Han; Mesoporous GaN for Photonic Engineering - Highly Reflective GaN Mirrors as an Example, ACS Photonics 7, 980 (2015).

M. J. Schwab, J. Han, L. D. Pfefferle; Neutral anodic etching of GaN for vertical or crystallographic alignment, Applied Physics Letters 24, 241603 (2015).

J. Y. Tsao, J. Han, R. H. Haitz, P. M. Pattison; The Blue LED Nobel Prize: Historical context, current scientific understanding, human benefit, Annalen der Physik 5-6, A53 (2015).

L. K. Aagesen, M. E. Coltrin, J. Han, K. Thornton; Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries, Journal of Applied Physics 19, 194302 (2015).

T. Chang, K. Xiong, S. H. Park, H. Mi, H. Zhang, S. Mikael, Y. H. Jung, J. Han, Z. Ma; AInGaN light-emitting diodes with band-pass-filter-like GaN: Si nanoporous structures, IEEE MTT-S International Microwave Symposium 1-4 (2015).

J. Song, D. Chen, B. Leung, Y. Zhang, J. Han; Single Crystalline GaN Tiles Grown on Si (111) Substrates by Confined Lateral Guided Growth to Eliminate Wafer Bowing, Advanced Materials Interfaces 8 (2015).

S. H. Park, C. Zhang, G. Yuan, D. Chen, J. Han; (Invited) Applications of Electrochemistry for Novel Wide Bandgap GaN Devices, ECS Transactions 1, 143 (2015).

J. Song, D. Chen, J. Han; Understanding of the mechanism of pulsed NH 3 growth in metalorganic chemical vapor deposition, Journal of Crystal Growth 415, 127 (2015).

2014

C. Lin, W. Lee, B. Shieh, D. Chen, D. Wang, J. Han; Fabrication of Current Confinement Aperture Structure by Transforming a Conductive GaN: Si Epitaxial Layer into an Insulating GaOx Layer, ACS applied materials & interfaces 24, 22235 (2014).

C. Lin, J. Wang, P. Cheng, W. Tseng, F. Fan, K. Wu, W. Lee, J. Han; Current steering effect of GaN nanoporous structure, Thin Solid Films 570, 293 (2014).

L. Han, J. Zhou, Y. Sun, Y. Zhang, J. Han, J. Fu, R. Fan; Single-Crystalline, Nanoporous Gallium Nitride Films With Fine Tuning of Pore Size for Stem Cell Engineering, Journal of nanotechnology in engineering and medicine 4, 040903 (2014).

K. Xiong, S. H. Park, J. Song, G. Yuan, D. Chen, B. Leung, J. Han; Single Crystal Gallium Nitride Nanomembrane Photoconductor and Field Effect Transistor, Advanced Functional Materials 41, 6503 (2014).

S. H. Park, G. Yuan, D. Chen, K. Xiong, J. Song, B. Leung, J. Han; Wide Bandgap III-Nitride Nanomembranes for Optoelectronic Applications, Nano Letters 8, 4293 (2014).

Y.-H. Ko, J. Song, B. Leung, J. Han, Y.-H. Cho; Multi-color broadband visible light source via GaN hexagonal annular structure, Scientific reports 4 (2014).

B. Leung, D. Wang, Y. Kuo, K. Xiong, J. Song, D. Chen, S. H. Park, S. Y. Hong, J. W. Choi, J. Han; Semipolar (202-1) GaN and InGaN quantum wells on sapphire substrates, Applied Physics Letters 26, 262105 (2014).

C. Lin, Y. Tseng, W. Lee, W. Hsu, Y. Chen, S. H. Park, J. Han; Fabrication of InGaN light-emitting diodes with embedded air-gap disks using laser-drilling and electrochemical processes, Applied Physics Express 7, 076501 (2014).

J. Han, H. Amano, L. Schowalter; Deep UV LEDs, Semiconductor Science and Technology 8, 080301 (2014).

B. Leung, J. Song, Y. Zhang, M. Tsai, G. Yuan, J. Han; Using the Evolutionary Selection Principle in Selective Area Growth to Achieve Single-Crystalline GaN on SiO2, International Journal of High Speed Electronics and Systems 01n02, 1450003 (2014).

J. Song, B. Leung, Y. Zhang, J. Han; Growth, structural and optical properties of ternary InGaN nanorods prepared by selective-area metalorganic chemical vapor deposition, Nanotechnology 22, 225602 (2014).

J. Song, G. Yuan, K. Xiong, B. Leung, J. Han; Epitaxial Lateral Overgrowth of Nitrogen-Polar (0001̅) GaN by Metalorganic Chemical Vapor Deposition, Crystal Growth & Design 5, 2510 (2014).

C. Lin, W. Lee, Y. Chen, Y. Tseng, J. Dai, J. Han; Current Confinement Effect of InGaN Devices by Forming Photoelectrochemical-Oxidized GaN Nanoporous Structures, ECS Transactions 4, 251 (2014).

K. Huang, K. Wu, P. Cheng, W. Tseng, B. Shieh, C. Lin, B. Leung, Jung Han; AInGaN light-emitting diodes with band-pass-filter-like GaN: Si nanoporous structures, Journal of Physics D: Applied Physics 14, 145101 (2014).

G. Yuan, S. H. Park, B. Leung, J. Han; New directions in GaN material research: thinner and smaller, SPIE OPTO 89860C-89860C-11 (2014).

B. Leung, J. Han, Q. Sun; Strain relaxation and dislocation reduction in AlGaN step‐graded buffer for crack‐free GaN on Si (111), physica status solidi (c) 3-4, 437 (2014).

V. Kachkanov, B. Leung, J. Song, Y. Zhang, M. Tsai, G. Yuan, J. Han, K.P. O'Donnell; Structural dynamics of GaN microcrystals in Evolutionary Selection Selective Area Growth probed by X-ray microdiffraction, Scientific reports 4, 4651 (2014).

2013

S. Feng, Y. Chen, C. Lai, L. Tu, J. Han; Anisotropic strain relaxation and the resulting degree of polarization by one-and two-step growth in nonpolar a-plane GaN grown on r-sapphire substrate, Journal of Applied Physics 23, 233103 (2013).

M. Coltrin, B. Leung, M. Tsai, J. Song, Y. Zhang, G. Yuan, J. Han; Analysis of Channel Confined Growth for Single-Crystalline GaN Layers on SiO2, Crystal Growth&Design SAND2013-10757J (2013).

S. Huang, Y. Zhang, B. Leung, G. Yuan, G. Wang, H. Jiang, Y. Fan, Q. Sun, J. Wang, K. Xu, J. Han; Mechanical properties of nanoporous GaN and its application for separation and transfer of GaN thin films, ACS applied materials & interfaces 21, 11074 (2013).

M. J. Schwab, D. Chen, J. Han, L. D. Pfefferle; Aligned mesopore arrays in GaN by anodic etching and photoelectrochemical surface etching, The Journal of Physical Chemistry C 33, 16890 (2013).

B. Leung, J. Song, Y. Zhang, J. Han; Evolutionary Selection Growth: Towards Template-Insensitive Preparation of Single-Crystal Layers, Advanced Materials 25, 1285 (2013).

2012

D. Chen, J. Han; High reflectance membrane-based distributed Bragg reflectors for GaN photonics, Applied Physics Letters 101, 221104 (2012).

D. Chen, H. Xiao, J. Han; Nanopores in GaN by electrochemical anodization in hydrofluoric acid: Formation and mechanism, Journal of Applied Physics 112, 064303 (2012).

Y. Zhang, B. Leung, J. Han; A liftoff process of GaN layers and devices through nanoporous transformation, Applied Physics Letters 100, 181908 (2012).

B. Leung, Q. Sun, C. D. Yerino, Y. Zhang, J. Han, B. Kong, H. Cho, K. Liao, Y.L. Li; Growth evolution and microstructural characterization of semipolar (1122) GaN selectively grown on etched r-plane sapphire, Journal of Crystal Growth 341, 27 (2012).

B. Leung, Q. Sun, C. D. Yerino, Y. Zhang, Jung Han, M. E. Coltrin; Using the kinetic Wulff plot to design and control nonpolar and semipolar GaN heteroepitaxy, Semiconductor Science and Technology 27, 024005 (2012).

B. Leung, Y. Zhang, C. D. Yerino, Jung Han, Q. Sun, Z. Chen, S. Lester, K. Liao, Y. Li; Optical emission characteristics of semipolar (1122) GaN light-emitting diodes grown on m-sapphire and stripe-etched r-sapphire, Semiconductor Science and Technology 27,024016 (2012).

C. Dang, J. Lee, Y, Zhang, J. Han, C. Breen, J. S. Steckel, S. Coe-Sullivan, and A. Nurmikko; A wafer-level integrated white-light-emitting diode incorporating colloidal quantum dots as a nanocomposite luminescent material, Advanced Materials 24, 5915-5918 (2012).

B.-H. Kong, Q. Sun, J. Han, I.-H. Lee, H.-K. Cho; Classification of stacking faults and dislocations observed in nonpolar a-plane GaN epilayers using transmission electron microscopy, Applied Surface Science 258, 2522 (2012).

S.-W. Feng, L.-W. Tu, H.-C. Wang, Q. Sun, and J. Han; The role of growth-pressure on the determination of anisotropy properties in nonpolar m-plane GaN, ECS Journal of Solid State Science and Technology 1, R50 (2012).

2011

Q. Sun, C. D. Yerino, B. Leung, J. Han, M. E. Coltrin; Understanding and controlling heteroepitaxy with the kinetic Wulff plot: A case study with GaN, Journal of Applied Physics 110, 053517 (2011).

C. D. Yerino, Y. Zhang, B. Leung, M. L. Lee, T. Hsu, C. Wang, W. Peng, J. Han; Shape transformation of nanoporous GaN by annealing: From buried cavities to nanomembranes, Applied Physics Letters 98, 251910 (2011).

Y. Zhang, Q. Sun, B. Leung, J. Simon, M. L. Lee, J. Han; The fabrication of large-area, free-standing GaN by a novel nanoetching process, Nanotechnology 22, 045603 (2011).

S.-W. Ryu, Y. Zhang, B. Leung, C. D. Yerino, and J. Han; Improved photoelectrochemical water splitting efficiency of nanoporous GaN photoanode, Semiconductor Science and Technology 27, 015014 (2011).

C. Dang, Y. Zhang, J. Han, A. Nurmikko, C. Breen, J. S. Steckel, and S. Coe-Sullivan; A wavelength engineered emitter incorporating CdSe-based colloidal quantum dots into nanoporous InGaN/GaN multiple quantum well matrix, Physica Status Solidi (c) 8, 2337-2339 (2011).

S.-Y. Kwon, Q. Sun, H.-C. Seo, and J. Han; Growth of cubic InN on GaP(100) with GaN buffer by metalorganic chemical vapour deposition, Journal of Physics D: Applied Physics 44, 285403 (2011).

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, H. Amano, S. J. Pearton, I.-H. Lee, Q. Sun, J. Han, S. Y. Karpov; Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency, Applied Physics Letters 98, 072104 (2011).

2010

Y. Zhang, S.-W. Ryu, C. D. Yerino, B. Leung, Q. Sun, Q. Song, H. Cao, and J. Han; A conductivity-based selective etching for next generation GaN devices, Physica Status Solidi (a) 247, 1713 (2010).

H. Kim, Z.-L. Guan, Q. Sun, A. Kahn, J. Han, and A. Nurmikko; Surface and interface states of gallium-polar versus nitrogen-polar GaN: Impact of thin organic semiconductor overlayers, Journal of Applied Physics 107, 113707 (2010).

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, T. G. Yugova, E. A. Petrova, Q. Sun, Y. Zhang, C. D. Yerino, T.-S. Ko, I.-H. Lee, and J. Han; Electrical properties and deep traps spectra of a-plane GaN films grown on r-plane sapphire, Materials Science and Engineering B 166, 220 (2010).

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Q. Sun, Y. Zhang, Y. S. Cho, I.-H. Lee, and J. Han; Electrical and luminescent properties and deep traps spectra of N-polar GaN films, Materials Science and Engineering B 166, 83 (2010).

A. Y. Polyakov, A. V. Markov, M. V. Mezhennyi, A. A. Donskov, S. S. Malakhov, A. V. Govorkov, Y. P. Kozlova, V. F. Pavlov, N. B. Smirnov, T. G. Yugova, I.-H. Lee, J. Han, Q. Sun, S. J. Pearton; a-plane GaN hydride vapor phase epitaxy on a-plane GaN templates with and without use of TiN intermediate layers, Journal of Vacuum Science and Technology B 28, 1039-1043 (2010)

2009

Q. Sun, B. H. Kong, C. D. Yerino, T.-S. Ko, H. K. Cho, and J. Han; Morphological and microstructural evolution in the two-step growth of nonpolar a-plane GaN on r-plane sapphire, Journal of Applied Physics 106, 123519 (2009).

Q. Sun, B. Leung, C. D. Yerino, Y. Zhang, and J. Han; Improving microstructural quality of semipolar (1122) GaN on m-plane sapphire by a two-step growth process, Applied Physics Letters 95, 231904 (2009).

Y.-L. Wang, B. H. Chu, C. Y. Chang, K. H. Chen, Y. Zhang, Q. Sun, J. Han, S. J. Pearton, and F. Ren; >Hydrogen sensing of N-polar and Ga-polar GaN Schottky diodes, Sensors and Actuators B: Chemical 142, 175 (2009).

C. Y. Chang, Y.-L. Wang, B. P. Gila, A. P. Gerger, S. J. Pearton, C. F. Lo, F. Ren, Q. Sun, Y. Zhang, and J. Han; Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors, Applied Physics Letters 95, 082110 (2009).

Y.-L. Wang, F. Ren, U. Zhang, Q. Sun, C. D. Yerino, T. S. Ko, Y. S. Cho, I. H. Lee, J. Han, and S. J. Pearton; Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes, Applied Physics Letters 94, 212108 (2009).

Q. Sun, C. D. Yerino, Y. Zhang, Y. S. Cho, S.-Y. Kwon, B. H. Kong, H. K. Cho, I.-H. Lee, and J. Han; Effect of NH3 flow rate on m-plane GaN growth on m-plane SiC by metalorganic chemical vapor deposition, J. Cryst. Growth 311, 3824 (2009).

Q. Sun, T.-S. Ko, C. D. Yerino, Y. Zhang, I.-H. Lee, J. Han, T.-C. Lu, H.-C. Kuo, and S.-C. Wang; Effect of controlled growth dynamics on the microstructure of nonpolar a-plane GaN revealed by x-ray diffraction, Jpn. Journal of Applied Physics 48, 071002 (2009).

H. Kim, Q. Zhang, Y.-K. Song, A. Nurmikko, Q. Sun, and J. Han; Nitride-organic hybrid heterostructures for possible novel optoelectronic devices: charge injection and transport, Physica Status Solidi (c) 6, 593 (2009).

Q. Sun, Y. S. Cho, B. H. Kong, H. K. Cho, T.S. Ko, C. D. Yerino, I.-H. Lee, and J. Han; N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition, J. Cryst. Growth 311, 2948 (2009).

2008

Q. Sun, C. D. Yerino, T. S. Ko, Y. S. Cho, I.H. Lee, J. Han, and M. E. Coltrin; Understanding non-polar GaN growth through kinetic Wulff plots, Journal of Applied Physics 104, 093523 (2008).

Q. Sun, Y. S. Cho, I.H. Lee, J. Han, B. H. Kong, and H. K. Cho; Nitrogen-polar GaN growth evolution on c-plane sapphire, Applied Physics Letters 93, 131912 (2008).

Y. S. Cho, Q. Sun, I.-H. Lee, T.-S. Ko, C. D. Yerino, J. Han, B. H. Kong, H. K. Cho, and S. Wang; Reduction of stacking fault density in m-plane GaN grown on SiC, Applied Physics Letters 93, 111904 (2008).

Q. Sun, S.-Y. Kwon, Z. Y. Ren, J. Han, T. Onuma, S. F. Chichibu, and S. Wang; Microstructural evolution in m-plane GaN growth on m-plane SiC, Applied Physics Letters 92, 051112 (2008).

2007

S.-Y. Kwon, Z. Ren, Q. Sun, J. Han, Y.-W. Kim, E. J. Yoon, B. H. Kong, and H. K. Cho; Observation of oxide precipitates in InN nanostructures, Applied Physics Letters 91, 234102 (2007).

Z. Ren, Q. Sun, S. Y. Kwon, J. Han, K. Davitt, Y. K. Song, A. V. Nurmikko, H.K. Cho, W. Liu, J. A. Smart, and L. J. Schowalter; Heteroepitaxy of AlGaN on bulk AlN substrates for deep ultraviolet light emitting diodes, Applied Physics Letters 91, 051116 (2007).

Z. Ren, Q. Sun, S.-Y. Kwon, J. Han, K. Davitt, Y. K. Song, A. V. Nurmikko, W. Liu, J. A. Smart, and L. J. Schowalter; AlGaN deep ultraviolet LEDs on bulk AlN substrates, Physica Status Solidi (c) 4, 2482 (2007).

K. Davitt, Y.-K. Song, W. Patterson, A. V. Nurmikko, Z. Ren, Q. Sun, and J. Han; UV LED arrays at 280 and 340 nm for spectroscopic biosensing, Physica Status Solidi (a) 204, 2112 (2007).

T. Henry, K. Kim, Z. Ren, C. Yerino, J. Han, H. X. Tang; Directed growth of horizontally aligned gallium nitride nanowires for nanoelectromechanical resonator arrays, Nano Lett. 7, 3315 (2007).

K Kim, T. Henry, G. Cui, J. Han, Y.K. Song, A. V. Nurmikko, H. X. Tang; Epitaxial growth of aligned GaN nanowires and nanobridges, Phys. Status Solidi B 244, 1810 (2007).

2004~2006

S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. Denbaars, J. S. Speck, U.K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota , Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors, Nature Materials 5, 810 (2006).

J. Su, M. Gherasimova, G. Cui, H. Tsukamoto, J. Han, T. Onuma, M. Kurimoto, S. F. Chichibu, C. Broadbridge, A. Lehman, Y. He, and A. V. Nurmikko, Growth of AlGaN nanowires by Metal-Organic Chemical Vapor Deposition, Applied Physics Letters 87, 183108 (2005).

K. Davitt, Y. K. Song, W. R. Patterson III, A. V. Nurmikko, M. Gherasimova, J. Han, Y. L. Pan, R. K. Chang, 290 and 340 nm UV LED arrays for fluorescence detection from single airborne particles, Optics Express 13, 9548 (2005).

Y. He; Y. K. Song; A. V. Nurmikko; J. Su; M. Gherasimova; G. Cui; J. Han; Optically pumped ultraviolet AlGaInN quantum well laser at 340 nm wavelength, Applied Physics Letters 84, 463 (2004).

M. Gherasimova; G. Cui; S. R. Jeon; Z. Ren; D. Martos; J. Han; Y. He; A. V. Nurmikko; Droplet heteroepitaxy of GaN quantum dots by metal-organic chemical vapor deposition, Applied Physics Letters 85, 2346 (2004).

Book Chapters

Q. Sun and J. Han; Heteroepitaxy of Nonpolar and Semipolar GaNin Heteroepitaxy of Nonpolar and Semipolar GaN, ed. S. Pearton, Springer Series in Materials Science (2012).

A.-P. Zhang, F. Ren, J. Han, S. J. Pearton, S. S. Park, Y. J. Park, J.-I. Chyi; GaN and AlGaN High Voltage Power Rectifiersin Wide Energy Bandgap Electronic Devices, ed. F. Ren and J. C. Zolper, World Scientific Publishing Co. (2003 ).

Conferences Prensentations

2013

V. Kachkanov, B. Leung, J. Song, Y. Zhang, M.-C. Tsai, G. Yuan, and J. Han; Synchrotron X-ray microdiffraction characterization of GaN microcrystals grown on silicon by confined lateral overgrowth, UK Nitride Consortium (UKNC), Cardiff, UK, (2013).

2012

J. Han; Selective area growth of GaN: Prospects and New Twists, International Conference on Metal Organic Vapor Phase Epitaxy (IC-MOVPE 16), Busan, Korea (2012) invited.

B. Leung, J. Song, Y. Zhang, M.-C. Tsai, and J. Han; Single crystal GaN on SiO2/Si(100), International Workshop on Nitride Semiconductors (IWN-2012), Sapporo, Japan (2012).

M.-C. Tsai, B. Leung, J. Han, and J. Han; Accelerating radiative recombination by reducing Auger losses: a numerical study, International Workshop on Nitride Semiconductors (IWN-2012), Sapporo, Japan (2012).

J. Song, B. Leung, Y. Zhang, and J. Han; Single-crystal GaN on SiO2 for monolithic integration with CMOS, International Symposium on Growth of III-Nitrides (ISGN-4) ), St. Petersburg, Russia (2012).

J. Song, B. Leung, Y. Zhang, and J. Han; InGaN nano-substrate for long wavelength light emitting diodes grown by selective metal-organic chemical vapor deposition, Electronic Materials Conference, Pennsylvania, USA (2012).

D. Chen, and J. Han; Membrane-based GaN distributed Bragg reflectors (DBR) for photonic applications, Electronic Materials Conference, Pennsylvania, USA (2012).

M.-C. Tsai, B. Leung, J. Han, M. E. Coltrin, and Y.-K. Ko; Possibilities of combating auger losses through radiative recombination engineering: A numerical study, Electronic Materials Conference, Pennsylvania, USA (2012).

S. Huang, Y. Zhang, B. Leung, and J. Han; Laser-free liftoff process incorporating nanoporous GaN for vertical LEDs, Electronic Materials Conference, Pennsylvania, USA (2012).

2011

J. Han; GaN for flexible devices - possibility of an inorganic-organic hybrid approach, International Workshop on Flexible Signage and Displays, Daejeon, Korea (2011) invited.

B. Leung, Y. Zhang, C. D. Yerino, and J. Han; Nanoporous smart-cutting of GaN for vertical thin film LEDs, International Conference on Nitride Semiconductors (ICNS-9), Glasgow, Scotland (2011).

C. D. Yerino, Y. Zhang, B. Leung, and J. Han; Shape transformation of nanoporous GaN by annealing: Buried cavities and nanomembranes, Electronic Materials Conference, Santa Barbara, USA (2011).

Y. Zhang, Q. Sun, B. Leung, J. Simon, M. L. Lee, and J. Han; Large-area, free standing GaN by a novel nanoetching process and substrate recycling, Electronic Materials Conference, Santa Barbara, USA (2011).

B. Leung, Y. Zhang, C. D. Yerino, J. Han, B.-K., H.-K. Cho, Q. Sun, Z. Chen, S. Lester, K.-Y. Liao, and Y.-L. Li; Optical emission patterns in semipolar (1122) GaN light emitting didoes on planar m-plane and etched r-plane sapphire, Electronic Materials Conference, Santa Barbara, USA (2011).

B. Leung, Y. Zhang, Q. Sun, C. D. Yerino, Z. Chen, S. Lester, K.-Y. Liao, Y.-L. Li, J. Han; Growth of cubic InN on GaP(100) with GaN buffer by metalorganic chemical vapour deposition, ”CLEO: 2011 Laser Applications to Photonic Applications, OSA Technical Digest, paper CWF2, Balitmore, USA (2011).

C. Dang, Y. Zhang, J. Lee, J. Han, A. Nurmikko, C. Breen, J. S. Steckel, S. Coe-Sullivan; Wavelength engineered luminescent material incorporating colloidal quantum dot within a nanoporous gallium nitride matrix, ”CLEO: 2011 Laser Applications to Photonic Applications, OSA Technical Digest, paper CWF2, Balitmore, USA (2011).

B. Leung, Y. Zhang, C. D. Yerino, and J. Han; Nanoporous smart-cutting of GaN for inorganic flexible light emitting devices, ”MRS Fall Meeting, Boston, USA (2011).

D. Chen, H. Xiao, Y. Zhang, and J. Han; Morphology and formation mechanism of porous GaN via HF electrochemical etch and its application in lift-off based thin layers, ”CLEO: 2011 Laser Applications to Photonic Applications , ”MRS Fall Meeting, Boston, USA (2011).

2010

C. Yerino and J. Han; A conductivity-based selective etching for next generation GaN devices, International Workshop on Nitride Semiconductors (IWN 2010), Florida, USA invited.

Y. Zhang and J. Han; Semipolar GaN on nanoporous GaN, International Workshop on Nitride Semiconductors (IWN 2010), Florida, USA.

Y. Zhang and J. Han; Nanoporous GaN, International Workshop on Nitride Semiconductors (IWN 2010), Florida, USA.

B. Leung, Y. Zhang, Q. Sun, C. D. Yerino, and J. Han; Improved semipolar (1122) GaN LEDs on planar and etched sapphire substrates , International Workshop on Nitride Semiconductors (IWN 2010), Florida, USA.

C. Dang and J. Han; CdSe in nanoporous MQW, International Workshop on Nitride Semiconductors (IWN 2010), Florida, USA.

Y. Zhang, Q. Sun, C. D. Yerino, B. Leung, Q. Song, C. Dang, S.-W. Ryu, H. Cao, A. Nurmikko and J. Han; Electrochemical etching of GaN and its applications, Electronic Materials Conference, Notre Dame, USA (2010).

B. Leung, Q. Sun, C. D. Yerino, Y. Zhang, J. Han, H. Li, D. Lee, E. Armour, and A. Paranjpe; 2 um thick device quality GaN on Si(111) using AlGaN graded buffer, Electronic Materials Conference, Notre Dame, USA (2010).

Q. Sun, and J. Han; Nonpolar and semipolar GaN heteroepitaxy on sapphire for LED application, SPIE Photonics West, California, USA (2010)

2009

Q. Sun, Y. Zhang, T.-S. Ko, B. Leung, C. D. Yerino, I.-H. Lee, J. Han, H. Kim, and A. Nurmikko; N-polar (Al, In, Ga)N grown by metalorganic chemical vapor deposition, Electronic Materials Conference, Pennsylvania, USA (2009).

Q. Sun, T.-S. Ko, C. D. Yerino, Y. Zhang, I.-H. Lee, J. Han, B.-H. Kong, and H.-K. Cho; Nucleation and evolution in the two-step growth of a-plane GaN for improving the microstructural quality, Electronic Materials Conference, Pennsylvania, USA (2009).

C. D. Yerino, Q. Sun, T.-S. Ko, B. Leung, I-H. Lee, and J. Han; Kinetic Wulff Diagram: Toward Rational Design of Nonpolar and Semipolar GaN heteroepitaxy, Electronic Materials Conference, Pennsylvania, USA (2009).

C. D. Yerino, Q. Sun, T.-S. Ko, I.-H. Lee, and J. Han; The origin of pits and striations on the surface of nonpolar a-plane GaN, Electronic Materials Conference, Pennsylvania, USA (2009).

Q. Sun, C. D. Yerino, B. Leung, and J. Han; Epitaxial science of GaN: nanowires, quantum dots, and mesoscopic morphology, SPIE Photonics West, California, USA (2009)