PUBLICATIONS

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BOOKS

Nanostructure Physics and Fabrication (Proceedings of the International Conference on Nanostructure Physics and Fabrication, College Station, Texas, 13-15 March 1989), edited by M. A. Reed and W. P. Kirk (Academic Press, San Diego, 1989).

BOOK CHAPTERS

M. A. Reed, “Resonant Tunneling in Double Barrier Heterostructures”, Properties of Impurity States in Semiconductor Superlattices, NATO ASI Series B : Physics Vol. 183 (Plenum, New York, 1988), pp. 255-269.

M. A. Reed, J. H. Luscombe, J. N. Randall, W. R. Frensley, R. J. Aggarwal, R. J. Matyi, T. M. Moore, and A. E. Wetsel, “Quantum Dot Resonant Tunneling Spectroscopy”, Proceedings of NATO Advanced Research Workshop on the Science and Engineering of 1- and 0- Dimensional Semiconductors, Cadiz, Spain, 29 March - 1 April 1989, pg. 139.

M. A. Reed, J.N. Randall, J. H. Luscombe, W. R. Frensley, R. J. Aggarwal, R. J. Matyi, T. M. Moore, and A. E. Wetsel, “Quantum Dot Resonant Tunneling Spectroscopy”, Proceedings of “Arbeitskreis Festkörperphysik bei der Deutschen Physikalischen Gesellschaft” (German Physical Society, Solid State), Münster, Germany, 3-7 April 1989, published in Festkörperprobleme / Advances in Solid State Physics Vol 29, ed. U. Rößler (Vieweg, Braunschweig/Wiesbaden 1989), pg. 267.     

JOURNAL ARTICLES

M. A. Reed and A. Honig, “Luminescence Excitation Mechanisms in CdS from Dependence of Photoluminescence and Thermoluminescence on Persistent Conductivity Stored Charge State”, Jour. Lum. 31-32, 415 (1984). [pdf]

M. A. Reed, R. T. Bate, W. M. Duncan, W. R. Frensley, and H. D. Shih, “Reduction of Electron-Phonon Scattering Rates by Total Spatial Quantization”, Picosecond Electronics and Optoelectronics, Springer Series in Electrophysics 21, (Springer-Verlag, Heidelberg, 1985) G. A. Mourou, D. M. Bloom, and C. H. Lee, eds., pg 135.

M. A. Reed, R. T. Bate, K. Bradshaw, W. M. Duncan, W. R. Frensley, J. W. Lee, and H. D. Shih, “Evidence for Spatial Quantization in GaAs-AlGaAs Multiple Quantum Dots”, J. Vac. Sci. Technol. 4B, 358 (1986). [pdf]

M. A. Reed, “Excited State Resonant Tunneling in GaAs-AlGaAs Double Barrier Heterostructure”, Superlattices and Microstructures 2, 65 (1986). [pdf]

W. P. Kirk, P. S. Kobiela, R. A. Schiebel, and M. A. Reed, “Investigation of the 2-Dimensional Electron Gas in HgCdTe by Quantum Hall Effect Measurement”, J. Vac. Sci. Technol. 4A, 2132 (1986). [pdf]

M. A. Reed, J. W. Lee, R. K. Aldert, and A. E. Wetsel, “Investigation of Quantum Well and Tunnel Barrier Growth by Resonant Tunneling”, Jour. Mat. Res. 1, 337 (1986).

M. A. Reed, J. W. Lee, and H-L. Tsai, “Resonant Tunneling Through a Double GaAs/AlAs Superlattice Barrier, Single Quantum Well Heterostructure”, Appl. Phys. Lett. 49 , 158 (1986). [pdf]

M. A. Reed, “Quantum Semiconductor Devices”, 1986 Symposium on VLSI Technology Technical Digest (IEEE Cat. No. 86 CH 2318-4), pg. 1.

M. A. Reed, W. P. Kirk, and P. S. Kobiela, “Investigation of Parallel Conduction in GaAs/AlxGa1-xAs Modulation Doped Structures in the Quantum Limit”, IEEE Jour. Quant. Elect. (Special Issue on Quantum Well Structures : Physics and Applications) QE22, 1753 (1986). [pdf]

M. A. Reed and J. W. Lee, “Resonant Tunneling In Double Barrier Heterostructures”, Proceedings of the 18th International Conference on the Physics of Semiconductors, 11-15 August 1986, Stockholm (World Scientific Publishing Co. Pte. Ltd., O. Engström, ed.), p. 231 (1987).

W. P. Kirk, P. S. Kobiela, R. A. Schiebel, and M. A. Reed, “Investigation of the 2-DEG in a HgCdTe Inversion Layer in the Quantum Limit”, Proceedings of the 18th International Conference on the Physics of Semiconductors, 11-15 August 1986, Stockholm (World Scientific Publishing Co. Pte. Ltd., O. Engström, ed.), p.497 (1987).

M. A. Reed and J. W. Lee, “Resonant Tunneling In Double Superlattice Barrier Heterostructures", Superlattices and Microstructures 3, 111 (1987). (Proceedings of the 2nd International Conference on Superlattices, Microstructures, and Microdevices, 17-20 August 1986, Göteborg). [pdf]

W. P. Kirk, P. S. Kobiela, H. D. Shih, and M. A. Reed, “Photoexcited Quantum Hall Behavior in Modulation Doped GaAs/AlGaAs Heterostructures : Parallel Conduction and Subthreshold Photoeffects”, High Magnetic Fields in Semiconductor Physics (Springer Series in Solid-State Sciences 71, 1987), pg. 122.

M. A. Reed, R. J. Koestner, and M. W. Goodwin, “Resonant Tunneling Through a HgTe/Hg1-xCdxTe Double Barrier, Single Quantum Well Heterostructure”, Appl. Phys. Lett. 49, 1293 (1986). [pdf]

M. A. Reed, J. W. Lee, and H-L. Tsai, “Resonant Tunneling in a Double GaAs/AlAs Superlattice Barrier Heterostructure”, Proceedings of the 13th International Symposium on Gallium Arsenide and Related Compounds, Las Vegas 1986, Institute of Physics Conference Series Number 83 (Institute of Physics, IOP Publishing Ltd., W. T. Lindley, ed., 1987), pg. 545.

M. A. Reed, “Quantum Semiconductor Devices”, Molecular Electronic Devices, Proceedings of the 3rd International Symposium on Molecular Electronic Devices, 6-8 October 1986, Washington, D. C. (Elsevier, F. L. Carter, R. E. Siatkowski, and H. Wohltjen, eds., 1988), pg. 3.

M. A. Reed, R. J. Koestner, M. W. Goodwin, and H. F. Schaake, “Resonant Tunneling Through a HgTe/Hg1-xCdxTe Double Barrier, Single Quantum Well Heterostructure”, J. Vac. Sci. Technol. 5A, 3147 (1987). [pdf]

J. W. Lee and M. A. Reed, “MBE Growth of AlGaAs/(In,Ga)As Resonant Tunneling Structures”, J. Vac. Sci. Technol. B5, 771 (1987). [pdf]

M. A. Reed and J. W. Lee, “Resonant Tunneling in a GaAs/AlGaAs Barrier/InGaAs Quantum Well Heterostructure”, Appl. Phys. Lett. 50, 845 (1987). [pdf]

M. A. Reed, R. T. Bate, and J. W. Lee, “Resonant Tunneling in Double Barrier Heterostructures”, SPIE Proceedings Vol. 792 : Quantum Well and Superlattice Physics, pg. 18 (1987).

R. T. Bate, G. A. Frazier, W. R. Frensley, J. W. Lee, and M. A. Reed, “Prospects for Quantum Integrated Circuits”, SPIE Proceedings Vol. 792 : Quantum Well and Superlattice Physics, pg. 26 (1987).

E. C. Palm, P. S. Kobiela, W. P. Kirk, R. A. Scheibel, and M. A. Reed, “Magnetotransport Studies of Weak Localization and Spin-Orbit Scattering in a HgCdTe Two-Dimensional Electron Gas”, J. Jour. Appl. Phys. 26, 701 (1987).

M. A. Reed, “Vertical Electronic Transport in Novel Semiconductor Heterojunction Structures”, Superlattices and Microstructures 4, 741 (1988). [pdf]

R. J. Matyi and M. A. Reed, “Quantization of the Hall Effect in a 3-Dimensional Quasiperiodic System”, Superlattices and Microstructures 3, 535 (1987). [pdf]

J. N. Randall, M. A. Reed, T. M. Moore, R. J. Matyi, and J. W. Lee, “Microstructure Fabrication and Transport Through Quantum Dots”, J.Vac. Sci. Technol. B6, 302, 1988. [pdf]

M. A. Reed, J. N. Randall, R. J. Aggarwal, R. J. Matyi, T. M. Moore, and A. E. Wetsel, “Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure”, Phys. Rev. Lett. 60, 535 (1988). [pdf]

M. A. Reed, R. J. Koestner, M. W. Goodwin, and H. F. Schaake, “Resonant Tunneling Through HgCdTe Heterostructures”, J. Vac. Sci. Technol. A6, 2619 (1988). [pdf]

M. A. Reed, “Vertical Electronic Transport in Semiconductore Nanostructures”, Physics and Technology of Submicron Structures, (Springer-Verlag, H. Heinrich, G. Bauer, and F. Kuchar, eds., 1988), pg. 64.

E. C. Palm, P. S. Kobiela, W. P. Kirk, R. A. Schiebel, and M. A. Reed, “Electron Transport and Localization in HgCdTe MISFETs”, J. Vac. Sci. Technol. A6 , 2716 (1988). [pdf]

J. N. Randall, M. A. Reed, R. J. Matyi, and T. M. Moore, “Nanostructure Fabrication of Zero-Dimensional Quantum Dot Diodes”, J. Vac. Sci. Technol. B6, 1861 (1988). [pdf]

J. N. Randall, M. A. Reed, R. J. Matyi, T. M. Moore, R. J. Aggarwal, and A. E. Wetsel, “Nanofabrication of Quantum Coupled Devices,” SPIE vol. 945, 137 (1988).

A. C. Seabaugh, M. A. Reed, W. R. Frensley, J. N. Randall and R. J. Matyi, “Realization of Pseudomorphic and Superlattice Bipolar Resonant Tunneling Transistors,” 1988 IEEE International Electron Devices Meeting, Tech. Digest pg. 900.

W. R. Frensley, M. A. Reed, and J. H. Luscombe, “Photoluminescent Determination of Charge Accumulation in Resonant Tunneling Structures,” (Comment), Phys. Rev. Lett. 62, 1208 (1989). [pdf]

M. A. Reed, W. R. Frensley, R. J. Matyi, J. N. Randall, and A. C. Seabaugh, “Realization of a Three-Terminal Resonant Tunneling Device : The Bipolar Quantum Resonant Tunneling Transistor,” Appl. Phys. Lett. 54, 1034 (1989). [pdf]

M. A. Reed, W. R. Frensley, W. M. Duncan, R. J. Matyi, A. C. Seabaugh, and H-L. Tsai, “Quantitative Resonant Tunneling Spectroscopy : Current-Voltage Characteristics of Precisely Characterized RTDs,” Appl. Phys. Lett. 54, 1256 (1989). [pdf]

M. Luban, J. H. Luscombe, M. A. Reed, and D. L. Pursey, “Anharmonic Oscillator Model of a Quantum Dot Nanostructure”, Appl. Phys. Lett. 54, 1997 (1989). [pdf]

M. A. Reed, W. R. Frensley, W. M. Duncan, R. J. Matyi, A. C. Seabaugh, and H-L. Tsai, “Quantitative Resonant Tunneling Spectroscopy : Current-Voltage Characteristics of Precisely Characterized RTDs”, Proceedings of the 15th International Symposium on Gallium Arsenide and Related Compounds, Atlanta, 1988, Institute of Physics Conference Series Number 96 (Institute of Physics, IOP Publishing Ltd., J. S. Harris, ed., 1989), pg. 587.

A. C. Seabaugh, W. R. Frensley, J. N. Randall, M. A. Reed, D. L. Farrington, and R. J. Matyi, “Pseudorporphic Biploar Resonant Tunneling Transistor”, IEEE Trans. Electron Devices 36, 2328 (1989). [pdf]

R. T. Bate, G. A. Frazier, W. R. Frensley, and M. A. Reed, “An Overview of Nanoelectronics”, Texas Instruments Technical Journal : Special Issue on Nanoelectronics, 6, Number 4, pg. 13.

M. A. Reed, A. C. Seabaugh, W. R. Frensley, R. J. Matyi, J. N. Randall, Y-C. Kao, C-H. Yang, H-L. Tsai, and D. L. Farrington, “Resonant Tunneling Transistors”, Texas Instruments Technical Journal : Special Issue on Nanoelectronics, 6, Number 4, pg. 29.

J. N. Randall, J. H. Luscombe, M. A. Reed, and A. C. Seabaugh, “Laterally Quantized Electron Devices: Particle-in-a-Box Technology”, Texas Instruments Technical Journal : Special Issue on Nanoelectronics, 6, Number 4, pg. 49.

J. N. Randall, M. A. Reed, and G. A. Frazier, “Nanoelectronics : Fanciful Physics or Real Devices?”, J. Vac. Sci. Technol. B7, 1398 (1989). [pdf]

A. C. Seabaugh, W. R. Frensley, Y-C. Kao, R. J. Matyi, J. N. Randall, and M. A. Reed, “Quantum-Well Resonant-Tunneling Transistors”, Proceedings of the Twelfth Biennial Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, August 7-9, 1989, Cornell University.

PATENTS (granted)

US4878104 10/31/1989 Optically pumped quantum coupled devices

US4851886 07/25/1989 Binary superlattice tunneling device and method

US4799091 01/17/1989 Quantum device output switch

US4783427 11/08/1988 Process for fabricating quantum-well devices

US4705361 11/10/1987 Spatial light modulator

EP0216155 04/01/1987 Three-terminal tunneling device

US4581621 04/08/1986 Quantum device output switch

US4575924 03/18/1986 Process for fabricating quantum-well devices

EP0170044 02/05/1986 Quantum-coupled device