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PUBLICATIONS
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Before
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2002
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2004 || 2005 || 2006 ||
2007 ||
Talks ||
BOOKS
Molecular Nanolectronics,
edited by M. A. Reed and T. Lee, (American Scientific Publishers, 2003).
BOOK CHAPTERS
W. Wang, T. Lee, M. Kamdar,
M.A. Reed, M. P. Steward, J. J. Huang, and J. M. Tour,
“Electrical Characterization of Metal-Molecule-Silicon
Junctions”, Molecular Electronics III, Ann. N.Y. Acad. Sci.
1006, pp. 36-47 (2003).
[pdf]
T. Lee, W. Wang, M.A. Reed, “Mechanism of Electron
Conduction In Self-Assembled Alkanethiol Monolayer Devices”,
Molecular Electronics III, Ann. N.Y. Acad. Sci. 1006, pp.
21–35 (2003). [pdf]
J. Chen, T. Lee, J. Su, W. Wang, M.A. Reed, A.M. Rawlett, M.
Kozaki, Y. Yao, R. C. Jagessar, S. M. Dirk, D. W. Price, J. M. Tour,
D.S. Grubisha, and D. W. Bennett, “Molecular Electronic
Devices”, Molecular Nanolectronics, edited by M. A. Reed and
T. Lee, (American Scientific Publishers, 2003). [pdf]
JOURNAL ARTICLES
J. Chen, J. Su, W. Wang,
and M. A. Reed, “Electronic Memory Effects in Self-Assembled
Monolayer Systems”, Physica E 16, 17 (2003).
[pdf]
Wenyong Wang, Takhee Lee, and M. A. Reed,
“Characterization of Electron Tunneling In Self-Assembled
Alkanethiol Monolayer Devices”, Physica E 19, 117 (2003) [pdf]
W. Wang, T. Lee, M. Kamdar, M.A. Reed, M.P. Stewart, J.-J. Hwang,
J.M. Tour, “Electrical characterization of
metal-molecule-silicon junctions”, Superlattices and
Microstructures 33, 217 (2003). [pdf]
Wenyong Wang, Takhee Lee, and M. A. Reed,
“Characterization of Electron Tunneling In Self-Assembled
Alkanethiol Monolayer Devices”, Phys. Rev. B 68, 035416
(2003) [pdf]
Guosheng Cheng, Andrei Kolmakov, Youxiang Zhang, Martin Moskovits,
Ryan Munden, Mark A. Reed, Guangming Wang, Daniel Moses, and Jinping
Zhang, "Current rectification in a single GaN nanowire with a
well-defined p-n junction", Appl. Phys. Lett. 83, 1578 (2003).
[pdf]
Flatt AK, Dirk SM, Henderson JC, Shen DE, Su J, Reed MA, Tour JM,
“Synthesis and testing of new end-functionalized oligomers
for molecular electronics”, Tetrahedron 59, 8555(2003). [pdf]
PATENTS (granted)
US6608386 08/19/2003
Sub-nanoscale electronic devices and processes
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