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Story posted 9 a.m. EST/6 a.m., PST, 4/19/99
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Isonics to use Yale patents to develop advanced wafer technology

GOLDEN, Colo. -- Isonics Corp., a materials technology company here, has
received exclusive rights from Yale University to patents covering semiconductor
devices based on isotopically engineered materials.

These patents cover silicon, germanium, gallium arsenide and other
isotopically pure semiconductors and are the basis for Isonics' silicon-28 wafer
development and commercialization. The patents claim that isotopic purity
yields improved thermal conductivity, among other properties of critical
importance to chip makers.

"We are sufficiently convinced of the scientific validity and the commercial
opportunity presented by isotopically engineered semiconductors to move
forward with this agreement," said Isonics president and CEO James E. Alexander.

Isonics is trying to commercialize silicon-28, which is being used in research at
several universities and semiconductor manufacturers. The company has formed a
partnership with Eagle-Picher Industries to develop a low-cost domestic source
for the production of the isotope. With the Yale patents, "the final objective is
the acceptance of silicon-28 by a semiconductor manufacturer and full-scale
production of devices using our technology," said Alexander. "We are now
focusing our efforts more sharply on this goal."

Isotopically pure silicon-28 has 50% higher thermal conductivity than natural
silicon, according to laboratory tests. Independent modeling studies have
demonstrated a 20 to 30 degree C reduction in peak operating temperature
as a result of using silicon-28.

Isonics believes that this propery will make silicon-28 attractive to chip
makers because it will increase performance and improve chip yields.
"Silicon-28 can provide these benefits over standard silicon, and can be
used without any changes in existing semiconductor manufacturing
processes," said Alexander.
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Note:  Prof. T-P. Ma's patent is "Isotopically Enriched Semiconductor
Devices", U.S. Patent No. 5442,191, Aug. 1995.