T.P. Ma, Ph.D.

T.P. Ma
Raymond John Wean Professor
Chairman
Dept. of Electrical Engineering
Yale University
New Haven, CT 06520-8284
Phone: 203-432-4211
Fax: 203-432-7769
Email: t.ma@yale.edu

Yanxiang Liu
Graduate Student and Research Assistant

Becton Center #023
Department of Electrical Engineering
Yale University
New Haven, CT 06520
Lab phone: 203-432- 4207
Email: yanxiang.liu@yale.edu

2001~	Ph.D candidate in Electrical Engineering, Yale University
1999-2001	M.S. in Microelectronics Tsinghua University, P.R. China
1994-1999	B.S. in Electronic Engineering Tsinghua University, P.R. China

Publications

1. Yanxiang Liu, X.W. Wang, and T.P. Ma et.al, “Reaction of Interfacial Layer and Trapping in HfO2 Gated MOS Structures”, International Conference on Solid-State and Integrated-Circuit Technology 2004

2. Yanxiang Liu, Christine Broadbridge, et. al. “Preparation, Microstructure and Physical Characteristics of Ferroelectric Pb5Ge3O11 Thin Films for Memory Application”, Proceedings of MRS meeting, fall of 2003, vol. 786

3 J.-P. Han, C.J. Xie, K.-H. Kim, C.C. Broadbridge, D. L. Pechkis, Y.X. Liu, W. Tong, A.H. Lehman, and T. P. Ma “Annealing Temperature Dependence of Crystallinity, Strain, and Memory Effects of SBT/SiN/Si Structure”, International Joint conference on the Applications of Ferroelectrics 2002

4. Tian-Ling Ren, Yan-Xiang Liu, Li-Tian Liu and Zhi-Jian Li, “PZT, PT Based Bulk Acoustic RF-filters”, International Symposium on Integrated Ferroelectrics 2001

Award

Best Student Paper Award of the International Conference on Solid-State and Integrated-Circuit Technology, 2004

Research Summary

Develop process technology for high quality Si₃N₄, HfO₂ and HfON thin films; research on high-k dielectric films and devices, including charge trapping, interfacial states, breakdown, and other reliability issues; realize fast, scalable, non-volatile Flash memories through tunnel barrier engineering. I am also interested in ferroelectric films and its application in memory devices.

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