Ten Representative Publications
Journal Papers
Books and Book Chapters

1974-1989 | 1989 - 1999 | 2000 - 2006

68. Y. Nishioka, Y. Ohji, R. Haruta, E. da Silva, T. Sugano, and T.P. Ma, `Passivation Effects of Fluorine at the Si Surface During Ultra-dry Oxidation', Solid-State Electronics, 33, Supplement, 389 (1990).

69. M.C. Bashaw, T.P. Ma, R.C. Barker, S. Mroczkowski, and R.R. Dube, `Introduction, Revelation, and Evolution of Complementary Gratings in Photorefractive Bismuth Silicon Oxide', Phys. Rev.B. 42, 5641 (1990).

70. M.C. Bashaw, T.P. Ma, R.C. Barker, and R.R. Dube, `Theory of Complementary Holograms Arising from Electron-Hole Transport in Photorefractive Media', J. Opt. Soc. Am. B, 7, 2329 (1990).

71. B. Yu, E. Arai, Y. Nishioka, Y. Ohji, S. Iwata, and T.P. Ma, `Investigation of Fluorine in SiO2 and on Si Surface by the 19F(p,a,g)16O Reaction, Secondary-ion Mass Spectrometry and X-ray Photoelectron Spectroscopy', Appl. Phys. Lett., 56(15), 1430 (1990).

72. Y. Wang, T.P. Ma, and R.C. Barker, `Early Stages of Interface-Trap Transformation in Metal-SiO2-(100)Si Structures', J. Appl. Phys., 68(5), 2520 (1990).

73. L. Vishnubhotla, W. Chen, and T.P. Ma, `AC Conductance Measurements on Radiation-Damaged (100)Si/SiO2 Interface After Defect Transformation', Appl. Phys. Lett., 57(17), 1778 (1990).

74. Y. Nishioka, T. Itoga, K. Ohyu, M. Kato, and T.P. Ma,`Radiation Effects on Fluorinated Field Oxides and Associated Devices,' IEEE Trans. Nucl. Sci., 37, 2026 (1990).

75. Y. Nishioka, M. Kato, Y. Ohji, and T.P. Ma, `Time Dependent Changes of Parasitic Effects Induced by Hogh-field Electron Injection in MOS Transistors', J. Appl. Phys., 69(1), 528 (1991).

76. Y. Nishioka, Y. Ohji, and T.P. Ma, `Gate-Oxide Breakdown Accelerated by Large Drain Current in N-channel MOSFETs', IEEE Electron Dev. Letts.,12, 134 (1991).

77. W. Chen and T.P. Ma, `Time Evolution of Capture Cross-Sections of Radiation-Induced Si/SiO2 Interface Traps Studied by Single-Frequency AC Conductance Technique', J. Appl. Phys., 70(2), 860, (1991).

78. W. Chen and T.P. Ma, `A New Technique for Measuring Lateral Distribution of Oxide Charge and Interface Traps Near MOSFET Junctions', IEEE Electron Dev. Letts., EDL-12, 393 (1991).

79. W. Chen, A. Balasinski, and T.P. Ma, `Lateral Distribution of Radiation-Induced Damage in MOSFET's', IEEE Trans. Nucl. Sci., NS-38, 1124 (1991).

80. H. Muto, M.H. Tsai, and T.P. Ma, `Random Telegraph Signals in Small MOSFET's after X-ray Irradiation and Annealing', IEEE Trans. Nucl. Sci., NS-38, 1116 (1991).

81. Y. Nishioka, T. Itoga, K. Ohyu, and T.P. Ma, `Improving Hot-Electron Hardness of Narrow Channel MOSFET's by Fluorine Implantation', Solid State Electronics, 34, 1197 (1991).

82. Binglong Zhang and T.P. Ma, `Back Channel Hot-Electron Effect on the Front Channel Characteristics in Thin-Film SOI MOSFET's', IEEE Electron Dev. Lett., EDL-12, 699 (1991).

83. L. Vishnubhotla, T.P. Ma, H. Tseng, and P. Tobin, `Interface Trap Generation and Electron Trapping in Fluorinated SiO2,' Appl. Phys. Lett, 59, 3595 (1991).

84. N. Haneji, L. Vishnubhotla, and T.P. Ma, `Possible Observation of Pb0 and Pb1 Centers at Irradiated (100)Si/SiO2 Interface from Electrical Measurements', Appl. Phys. Lett, 59, 3416 (1991).

85. C..L. Hwang, B. Chen, T.P. Ma, J. Golz, Y.Di, B. Halpern, and J. Schmitt, `Ferroelectric Pb(Zr,Ti)O3Thin Films Prepared by Gas Jet Deposition', Integrated Ferroelectrics, 2, 221 (1992).

86. X.W. Wang, A. Balasinski, and T.P. Ma, `Preoxidation Fluorine Implantation into Si: Process Related MOS Characteristics', J. Electrochem. Soc., 139, 244 (1992)

87. Balasinski, W. Chen, and T.P. Ma, `Effects of Combined X-Ray Irradiation and Hot-Electron Injection on NMOS Transistors', Journal of Electronic Materials, 21, 737 (1992).

88. Z.H. Liu, P. Nee, P.K. Ko, C. Hu, C.G. Sodini, B.J. Gross, T.P. Ma, and Y..C. Cheng, `Field and Temperature Acceleration of Time-Dependent Dielectric Breakdown for Reoxidized-Nitrided and Fluorinated Oxides', IEEE Electron Dev. Lett, EDL-13, 41 (1992).

89. L. Vishnubhotla and T.P. Ma, `Energy Shift of (100)Si/SiO2 Interface Traps Resulting from Avalanche Hole Injection', J. Appl. Phys., 71(2), 1058 (1992).

90. Balasinski and T.P. Ma, `Enhanced Electron Trapping Near Channel Edges in NMOS Transistors', IEEE Trans. Electron Dev., ED-39(7), 1680 (1992).

91. Wenliang Chen, Artur Balasinski, and T.P. Ma, `A Charge Pumping Method for Rapid Determination of Interface-Trap Parameters in Metal-Oxide-Semiconductor (MOS) Devices', Review of Scientific Intrusments, 63, 3188 (1992).

92. Wenliang Chen, Artur Balasinski, Binglong Zhang, and T.P. Ma, `Hot-Carrier Effects on Interface-Trap Capture Cross-Sections in MOSFET as Studied by Charge Pumping', IEEE Electron Dev. Lett, EDL-13, 201 (1992).

93. Acovic, C. Hsu, L. Hsia, A. Balasinski, and T.P. Ma, `Effects of X-ray Irradiation on GIDL in MOSFETs', IEEE Electron Dev. Lett, EDL-13, 189 (1992).

94. K. Tamer San, Cetin Kaya, David Liu, T.P. Ma, Man Wang, Pradeep Shah, `A New Technique for Determining the Capacitive Coupling Coefficients in Flash PROMs', IEEE Electron Dev. Lett, EDL-13, 328 (1992).

95. Binglong Zhang, Akira Yoshino, and T.P. Ma, `Single-Transistor Latch Induced Degradation of Front and Back Channel Thin-Film SOI Transistors', IEEE Electron Dev. Lett, EDL-13, 282 (1992).

96. Wenliang Chen and T.P. Ma, `Oxide Charge Build-up and Spread-out During Channel-Hot-Carrier Injection in NMOSFET's', IEEE Electron Dev. Lett, EDL-13, 319 (1992).

97. K. Tamer San, and T.P. Ma, `Determination of Trapped Oxide Charge in Flash EPROMs and MOSFETs with Thin Oxides', IEEE Electron Dev. Lett, EDL-13, 439 (1992).

98. W.R. Anderson, R.G. Wheeler, and T.P. Ma, `Observation of Interface Traps in the Silicon Conduction Band at the (100)Si/SiO2 Interface at 4.2 K', Appl. Phys. Lett, 61(9), 1107 (1992).

99. X.W. Wang and T.P. Ma, `Passivation of (111)Si/SiO2 Interface by Fluorine', Appl. Phys. Lett, 60(21), 2634 (1992).

100. T.P. Ma, `MOS Gate Oxide Reliability and the Role of Fluorine', J. Vac. Sci. Technology A, 10(4), 705 (1992).

101. Ming-Horn Tsai, H. Muto, and T.P. Ma, `Random Telegraph Signals Arising from Fast Interface States in MOS Transistors', Appl. Physics. Lett, 61(14), 1691 (1992).

102. S.P. Jeng, T.P. Ma, R. Cauteri, M. Anderle, and G. Rubloff, `Anomalous Diffusion of Fluorine in Silicon', Appl. Phys. Lett, 61(11), 1310 (1992).

103. Dechang Wang, T.P. Ma, John Golz, Bret Halpern, and Jerome Schmitt, `High Quality MNS Capacitors Prepared by Jet Vapor Deposition at Room Temperature', IEEE Electron Dev. Lett, 13(9), 482 (1992).

104. Akira Yoshino, T.P. Ma, and K. Okumura, `Hot-Carrier Effects in Fully Depleted Submicrometer NMOS/SIMOX as Influenced by Back Interface Degradation', IEEE Electron Dev. Lett, 13(10), 522 (1992).

105. Weliang Chen, Artur Balasinski, and T.P. Ma, `Evolution of Capture Cross-Sections of Radiation-Induced Interface Traps in MOSFET's as Studied by a Rapid Charge Pumping Technique', IEEE Trans. Nucl. Sci., 39, 2152 (1992)

106. Artur Balasinski and T.P. Ma, `Ionizing Radiation Damage Near CMOS Transistor Channel Edges', IEEE Trans. Nucl. Sci., 39, 1998 (1992)

107. Ming-Horn Tsai and T.P. Ma, `Effect of Radiation-Induced Interface Traps on 1/f Noise in MOSFET's', IEEE Trans. Nucl. Sci., 39, 2178 (1992)

108. X.W. Wang, Y. Wang, D. Wang, and T.P. Ma, `Improvement of Radiation Hardness due to Aging of Fluorinated and Chlorinated SiO2/Si MOS Capacitors', IEEE Trans. Nucl. Sci., 39, 2252 (1992)

109. T.P. Ma, `Reliability Issues Concerning Thin Gate SiO2 and SiO2/Si Interface for ULSI Applications', Nuclear Instruments and Methods in Physics Research, B74, 295 (1993).

110. Wenliang Chen, Artur Balasinski, and T.P. Ma, `Lateral Profiling of Oxide Charge and Interface Traps Near MOSFET Junctions', IEEE Trans. Electron Dev., 40(1), 187 (1993).

111. L. Vishnubhotla, T.P. Ma, H.H. Tseng, and P. Tobin, `Effects of Avalanche Hole Injection in Fluorinated SiO2 MOS Capacitors,' IEEE Electron Dev. Letts., EDL-14(4), 196 (1993).

112. Ming-Horn Tsai and T.P. Ma, `1/f Noise in Hot-Carrier Damaged MOSFET's: Effects of Oxide Charge and Interface Traps', IEEE Electron Dev. Letts., EDL-14(5), 256 (1993).

113. Artur Balasinski and T.P. Ma, `Reduction of Interface-Trap Density in Metal-Oxide-Semiconductor (MOS) Devices by Irradiation', Appl. Phys. Letts., 62(24), 3170 (1993).

114. W.R. Anderson, D.R. Lombardi, R.G. Wheeler, and T.P. Ma, `Determination of Si/SiO2 Interface Roughness Using Weak Localization', IEEE Electron Dev. Letts., EDL-14(7), 351 (1993).

115. Ming-Horn Tsai, Hirotaka Muto, and T.P. Ma, `Reply to "Comment on {\it Random Telegraph Signals Arising From Fast Interface States in Metal-SiO2-Si Transistors', Appl. Phys. Letts., 63(10), 1444, (1993).

116. Balasinski and T.P. Ma, `Impact of Radiation-Induced Nonuniform Damage Near MOSFET Junctions', IEEE Trans. Nuclear Science, 40(6), 1286, (1993).

117. Minghorn Tsai, Binglong Zhang, T.P. Ma, and L.K. Wang, `Random Telegraph Signals in Accumulation-Mode SOI/nMOSFET's' IEEE Electron Dev. Letts., EDL-15(4), 135 (1994).

118. Binglong Zhang, Artur Balasinski, and T.P. Ma, `Hot-Carrier Effects on Gate-Induced-Drain-Leakage (GIDL) Current in Thin-Film SOI/NMOSFET's', IEEE Electron Dev. Letts., EDL-15(5), 169 (1994).

119. Ming-Horn Tsai and T.P. Ma, `The Impact of Device Scaling on the Current Fluctuations in MOSFET's' IEEE Trans. Electron Dev., ED-41(11), 2061 (1994). (requires Adobe® Acrobat® Reader® to view.)

120. C. Szeles, B. Nielson, P.Asoka-Kumar, K. Lynn, A. Anderle, T.P. Ma, and G. Rubloff, "Role of Implantation Induced Defects in Surface-Oriented Diffusion of Fluorine in Silicon", J. Appl. Phys., 76(6), 3403 (1994).

121. Ming-horn Tsai, T.P. Ma, and Terence B. Hook, "Channel Length Dependence of Random Telegraph Signal in Sub-Micron MOSFET's", IEEE Electron Dev. Letts., 15(12), 504 (1994).

122. X.W. Wang, T.P. Ma, G.J. Cui, T. Tamagawa, J. Golz, S. Kareci, B. Halpern, and J.J. Schmitt, "Highly Reliable Silicon Nitride Films Made by Jet Vapor Deposition", Jpn. J. Appl. Phys. 34, Pt.1., No.2B, pp.955-958 (1995).

123. K. Tamer San, Cetin Kaya, and T.P. Ma, "Effects of Erase Source Bias on Flash EPROM Device Reliability'' IEEE Trans. Electron Dev., 42(1), 150 (1995).

124. Mallik, X.W. Wang, and T.P. Ma, "Interface Traps in Jet Vapor Deposited Silicon Nitride-Silicon Capacitors", J. Appl. Phys., 79(11), 8507 (1996).

125. Jin-Ping Han, Jun Gu, and T.P. Ma, "SrBi2Ta2O9 (SBT) Thin Films Prepared by Electrostatic Spray", Integrated Ferroelectrics, 14, 229 (1997).

126. Jin-Ping Han and T.P. Ma, "Electrode Dependence of Hydrogen-Induced Degradation in Ferroelectric Pb(Zr,Ti)O3 and SrBi2Ta2O9 Films", Appl. Phys. Lett., 71(9), 1267 (1997).

127. Y. Shi, X.W. Wang, G.J. Gu, T. Tamagawa, and T.P. Ma, "Ultra-Thin Silicon Dioxide Prepared by Room-Temperature Jet Vapor Deposition", Proc. of 4th Symp. on Silicon Nitride and Silicon Dioxide Dielectric, p.338 (1997).

128. Whye-Kei Lye, Eiji Hasegawa, T.P. Ma, R.C. Barker, Yin Hu, John Kuehne, and David Frystak, "Quantitative Inelastic Tunneling Spectroscopy in the Silicon Metal-Oxide-Semiconductor System", Appl. Phys. Lett., 71(17), 2523 (1997).

129. Jin-Ping Han and T.P. Ma, "Top Electrode Dependence of Forming Gas Annealing Effects on Ferroelectric Films", Integrated Ferroelectrics, 17, 471 (1997).

130. Jin-Ping Han and T.P. Ma, "SrBi2Ta2O9 Memory Capacitor on Si with Nitride Buffer", Appl. Phys. Lett., 72(10), 1185 (1998).

131. Chun Chen and T.P. Ma, "Direct Lateral Profiling of Hot-Carrier-Induced Oxide Charge and Interface Traps in Thin Gate MOSFET's", IEEE Transactions on Electron Device, 45(2), 512 (1998).

132. Chun Chen, Zhi-Zheng Liu, and T.P. Ma, "Analysis of Enhanced Hot-Carrier Effects in Scaled Flash Memory Devices", IEEE Transactions on Electron Device, 45(7), 1524 (1998).

133. Jin-Ping Han, Xin Guo, and T.P. Ma, "Memory Effects of SrBi2Ta2O9 Capacitor on Silicon with a Silicon Nitride Buffer", Integrated Ferroelectrics, 22, 213 (1998).

134. T.P. Ma, "Making Silicon Nitride Film A Viable Gate Dielectric", invited paper, IEEE Transactions on Electron Devices, 45(3), 680 (1998).

135. Yujun Li and T.P. Ma, "A Front-Gate Charge-Pumping Method for Probing Both Interfaces in SOI Devices", IEEE Transactions on Electron Device, 45(6), 1329 (1998).

136. Xin Guo and T.P. Ma, "Tunneling Leakage Current in Oxynitride: Dependence on Oxygen/Nitrogen Content", IEEE Electron Device Letters, 19(6), 207 (1998).

137. Y. Shi, X. Wang, and T.P. Ma, "Tunneling Leakage Current in Ultra-Thin (< 4nm) Nitride/Oxide Stack Dielectrics," IEEE Electron Device Letters, 19(10), 388 (1998).

138. Y. Shi, T.P. Ma, S. Prasad, and S. Handa, "Polarity Dependent Tunneling Current and Oxide Breakdown in Dual-Gate CMOSFETs", IEEE Electron Device Letters, 19(10), 391 (1998).

139. Y. Shi, T.P. Ma, S. Prasad, and S. Handa, "Polarity Dependent Tunneling Current in Dual-Gate CMOSFETs", IEEE Trans. on Electron Devices, 45(11), 2355 (1998).

140. Jin-Ping Han and T.P. Ma, "Ferroelectric-Gate Transistor as a Capacitor-Less DRAM Cell (FEDRAM)", Integrated Ferroelectrics, 27, 9 (1999).

141. W. Lu, X.W. Wang, R. Hammond, A. Kuliev, S. Koester, J.O. Chu, K. Ismail, T.P. Ma, and I. Adesida, "P-Type SiGe Transistors with Low Gate Leakage Using SiN Gate Dielectric", IEEE Electron Dev. Lett., 20(10), 514 (1999).

142. Y. Shi, X. Wang, and T.P. Ma, "Electrical Properties of High-Quality Ultra-Thin Nitride/Oide Stack Dielectrics", IEEE Trans. on Electron Devices, 46(2), 362 (1999).

143. M. Khare, X.W. Wang, and T.P. Ma, ''Transconductance in Nitride-Gate or Oxynitride-Gate Transistors", IEEE Electron Device Letters, {20(1), 57 (1999).

144. W. Lu, X. Wang, R. Hammond, A. Kuliev, J. Chu, K. Ismail, T. Ma, and I. Adesida, "p-Type SiGe Transistors with Low Gate Leakage Using SiN Gate Dielectric", IEEE Electron Device Letters, vol.20(10), 510 (1999).

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