Ten Representative Publications
Journal Papers
Books and Book Chapters

1974-1989 | 1989 - 1999 | 2000 - 2006

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1. T.P. Ma and R.C. Barker, "Effect of Gamma-Ray Irradiation on the Surface States of MOS Tunnel Junctions,'' J. Appl. Phys. 45, 317 (1974).

2. T.P. Ma and R.C. Barker, "Surface State Spectra from Thick Oxide MOS Tunnel Junctions,'' Sol. St. Electr. {17}, 913 (1974).

3. T.P. Ma, G. Scoggan, and R. Leone, "Comparison of Interface-State Generation by 25-keV Electron Beam Irradiation in P-Type and N-Type MOS Capacitors,'' Appl. Phys. Lett. 27, 61 (1975).

4. T.P. Ma, "Oxide Thickness Dependence of Electron-Induced Surface States in MOS Structures,'' Appl. Phys. Lett. 27, 615 (1975).

5. T.P. Ma, B-H. Yun, D.J. DiMaria, and G.A. Scoggan, "Effects of Electron-Beam Irradiation on the Properties of CVD Si3N4 Films in MNOS Structures,'' J. Appl. Phys. 47, 1599 (1976).

6. G.A. Scoggan and T.P. Ma, "Effects of Electron-Beam Radiation on MOS Structures as Influenced by the Silicon Dopant,'' J. Appl. Phys. 48, 249 (1977).

7. T.P. Ma and W-H. Ma, "Low Pressure RF Annealing: A New Technique to Remove Charge Centers in MIS Dielectrics,'' Appl. Phys. Lett. 32, 441 (1978).

8. W-H. Ma and T.P. Ma, "RF Annealing,'' 1977 IEDM Tech. Digest, pp. 151-153.

9. T.P. Ma and W-H. Ma, "Effects of RF Annealing on the Excess Charge Centers in MIS Dielectrics,'' IEEE J. Solid State Circuits SC-13, 445 (1978).

10. T.P. Ma and K. Miyauchi, "MIS Structures Based on Spin-on SiO2 on GaAs", Appl. Phys. Lett. 34, 88 (1979).

11. 11.W-H. Ma and T.P. Ma, "The Effect of RF Annealing Upon Electron-Beam rradiated MIS Structures,'' Sol. St. Electr. 27, 663 (1979).

12. T.P. Ma and M.R. Chin, "Removal of Radiation-Induced Electron Traps in MOS Structures by RF Annealing,'' Appl. Phys. Lett. 36, 81 (1980).

13. C.A. Pan and T.P. Ma, "High Quality Transparent Conductive Indium Oxide Films Prepared by Thermal Evaporation,'' Appl. Phys. Lett.37(2), 163 (1980).

14. P.V. Dressendorfer, S.K. Lai, R.C. Barker, and T.P. Ma, "Processing Dependence of Metal/Tunnel-Oxide/Silicon Junctions,'' Appl. Phys. Lett. 36, 850 (1980).

15. T.P. Ma and M.R. Chin, "RF Annealing Mechanisms in MOS Structures - An Experimental Simulation,'' J. Appl. Phys. 51(10), 5458 (1980).

16. C.A. Pan and T.P. Ma, "Work Function of In2O3 as Determined from Internal Photoemission,'' Appl. Phys. Lett. 37(8),714 (1980).

17. C.A. Pan and T.P. Ma, "Highly Transparent Conductive In2O3 Films Prepared by Thermal Evaporation,'' J. Electron Materials, 10, 43 (1981).

18. S.K. Lai, P.V. Dressendorfer, T.P. Ma, and R.C. Barker, "Optically Induced Bistable States in Metal/Tunnel-Oxide/Semiconductor Junctions,'' Appl. Phys. Lett. 38(1), 41 (1981).

19. T.P. Ma, "Ionizing Radiation Effects in SiO2 and RF Plasma Annealing,'' Semiconductor Silicon 1981, pp. 427-444.

20. C.A. Pan and T.P. Ma, "Evaporation of High Quality In2O3 Films from In2O3/In Source - Evaporation Chemistry and Thermodynamics,'' J. Electrochem. Soc. 128, 1953 (1981).

21. M.R. Chin and T.P. Ma, "Voltage and Frequency Dependence of Simulated RF Plasma Annealing in MOS Structurs,'' Appl. Phys. Lett {40}, 490 (1982).

22. M.R. Chin and T.P. Ma, "Photocurrent in Thermal SiO2 under X-ray Irradiation: Significance of Contact Injection,'' J. Appl. Phys. 53, 3673 (1982).

23. M.R. Chin and T.P. Ma, "Gate-Width Dependence of Radiation-Induced Interface Traps in Metal/SiO2/Si Devices,'' Appl. Phys. Lett. 42, 883 (1983).

24. V. Zekeriya and T.P. Ma, "Interface Traps Generated by Internal Photoemission in MOS Structures,'' Appl. Phys. Lett. 43, 95 (1983).

25. T.C. Chen, T.P. Ma, and R.C. Barker, "Infrared Transparent and Electrically Conductive Thin Film of In2O3,'' Appl. Phys. Lett. 43, 901 (1983).

26. Y. Okuyama and T.P. Ma, "High Efficiency Solar Cells Based on Ionizing Radiation Induced Inversion Layer,'' Appl. Phys. Lett. 44, 596 (1984).

27. V. Zekeriya and T.P. Ma, "Dependence of Radiation-Induced Interface Traps on Gate Al Thickness in Metal/SiO2/Si Structures,'' J. Appl. Phys. 56, 1017 (1984).

28. V. Zekeriya and T.P. Ma, "Effect of Stress Relaxation Generation of Radiation-Induced Interface Traps in Post-Metal-Annealed MOS Devices,'' Appl. Phys. Lett. 45, 249 (1984).

29. C.C. Wei and T.P. Ma, "Reduction of Apparent Dopant Concentration in the Surface Space Charge Layer of Oxidized Silicon by Ionizing Radiation,'' Appl. Phys. Lett. 45, 900 (1984).

30. V. Zekeriya and T.P. Ma, "Dependence of X-ray Generation of Interface Traps on Gate Metal Induced Interfacial Stress in MOS Structures,'' IEEE Trans. Nucl. Sci. NS-31, 1261 (1984).

31. S. Holland, T.C. Chen, T.P. Ma, and C. Hu, "On Physical Models for Gate Oxide Breakdown,'' IEEE Electron. Dev. Lett. EDL-5, 302 (1984).

32. H.Q. Su, C.C. Wei, and T.P. Ma, "Mobility Degradation in Very Thin Gate Oxide P-Channel MOSFETs,'' IEEE Trans. Electron. Dev., ED-32, 559 (1985).

33. V. Zekeriya, A. Wong, and T.P. Ma, "Spatial Distribution of Radiation-Induced Interface Traps under the Gate of an MOS Capacitor,'' Appl. Phys. Lett. 46, 80 (1985).

34. V. Zekeriya and T.P. Ma, "Dependence of Radiation-Induced Interface Traps on Gate Electrode Material in MOS Devices,'' Appl. Phys. Lett. 47, 54 (1985).

35. T.B. Hook and T.P. Ma, "Perimeter-Related Current in High-Field Tunneling into Silicon Dioxide,'' Appl. Phys. Lett. 47, 417 (1985).

36. T.B. Hook and T.P. Ma, "High Field Tunneling Calculations in MOS Capacitors Incorporating the Perimeter Effect,'' J. Appl. Phys. 59, 3881 (1986).

37. T.B. Hook and T.P. Ma, "Hot Electron Induced Interface Traps in MOS Capacitors: The Effect of Gate Induced Strain,'' Appl. Phys. Lett. 48, 1208 (1986).

38. T.H. Fedynyshyn, G.W. Grynkewich, T.B. Hook, M.D. Liu, and T.P. Ma,"The Effect of Aluminum vs Photoresist Masking on the Etching Rates of Silicon and Silicon Dioxide in CF4 Plasmas,'' J. Electrochem. Soc. 134, 206 (1987).

39. T.B. Hook and T.P. Ma, "Electron Trapping During High-Field Tunnel Injection in MOS Capacitors: The Effect of Gate-Induced Strain,'' J. Appl. Phys., 62(3), 931 (1987).

40. J. Li and T.P. Ma, "Effect of Nonuniform Carrier Distribution on MOSFET Channel Mobility Measurement,'' J. Appl. Phys. 61(4), 1664 (1987).

41. E. da Silva, Y. Nishioka,and T.P. Ma, "Two Distinct Interface Trap Peaks in Radiation Damaged Metal/SiO2/Si Structures,'' Appl. Phys. Lett., 51(4), 270 (1987).

42. E.F. da Silva, Y. Nishioka, and T.P. Ma, "Effects of Trichloroethane during Oxide Growth on Radiation-Induced Interface Traps in Metal/SiO2/Si Capacitors'', App. Phys. Lett., 51(16), 1262 (1987).

43. Y. Nishioka, E. da Silva, and T.P. Ma, "Time-Dependent Evolution of Interface Traps in Hot Electron Damaged Metal/SiO2/Si Capacitors,'' IEEE Electron Device Letters, EDL-8, 566 (1987).

44. T.H. Fedynyshyn, G.W. Grynkewich, and T.P. Ma, " Mask Dependent Etch Rates. II. The Effect of Aluminum versus Photoresist Masking on the Etch Rates of Si and SiO2 in Fluorine Containing Plasmas,'' J. Electrochem. Soc., 134, 2580 (1987).

45. X.W. Wang, M.D. Liu, T.P. Ma, and R.C. Barker, "Etching of Si Through SiO2 in CF4 + N2O Plasma,'' J. Electrochem. Soc., 135, 442 (1987).

46. Y. Nishioka, E. da Silva, and T.P. Ma, "Radiation-Induced Interface Traps in Mo/SiO2/Si Capacitors,'' IEEE Trans. Nucl. Sci., NS-34, 1166 (1987).

47. E. da Silva, Y. Nishioka, and T.P. Ma, "Radiation Response of MOS Capacitors Containing Fluorinated Oxides,'' IEEE Trans. Nucl. Sci., NS-34, 1190 (1987).

48. J. Li and T.P. Ma, "Scattering of Silicon Inversion Layer Electrons by Metal/Oxide Interface Roughness,'' J. Appl. Phys., 62(10), 4212 (1987).

49. Y. Nishioka, E.F. da Silva, Y.Wang, and T.P. Ma, 'Dramatic Improvement of Hot-Electron Induced Interface Degradation in MOS Structures Containing F or Cl in SiO2', IEEE Electron Device Letters, 9, 38 (1988).

50. Y. Wang, Y. Nishioka, T.P. Ma, and R.C. Barker, 'Radiation and Hot-electron Effects on SiO2/Si Interfaces with Oxides Grown in O2 Contaning Small Amounts of Trichloroethane', Appl. Phys. Letters, 52(7), 573 (1988).

51. Y. Nishioka, E. da Silva, and T.P. Ma, 'On the Equivalence between Interface Traps in SiO2/Si Generated by Radiation Damage and Hot Electron Injection', Appl. Phys. Letters, 52(9), 720 (1988).

52. C. Kaya, T.P. Ma, T.C. Chen, and R.C. Barker, 'Properties of Si-rich SiNx:H Films Prepared by Plasma-Enhanced Chemical Vapor Deposition', J. Appl. Phys.,64, 3949 (1988).

53. C. Kaya, T.P. Ma, and R.C. Barker, 'Properties of Plasma Deposited Si-rich Silicon Nitride Films in Current Enhancement Injectors',J. Appl. Phys., 64, 3958 (1988).

54. X. Wang, Yu Wang, Y. Nishioka, E. F. da Silva, and T.P. Ma, 'Radiation-Induced Enhancement of Minority Carrier Lifetime in Metal/SiO2/Si Capacitors Having Oxides Grown in O2 with Trichloroethane Additive', Applied Phys. Letters, 53(7), 592 (1988).

55. Y. Nishioka, E.F. da Silva, and T.P. Ma, 'Time Dependent Evolution of SiO2/Si Interface Traps after Repeated Radiation Damage', J. Appl. Phys., 64, 3317 (1988).

56. Y. Nishioka, and T.P. Ma, "Interface Traps at Midgap during Defect Transformation in (100)Si/SiO2," Appl. Phys. Lett. 53(18), 1744 (1988).

57. Y. Nishioka, E.F. da Silva, and T.P. Ma, `Evidence for (100)Si/SiO2 Interfacial Defect Transformation after Ionizing Radiation', IEEE Trans. Nucl. Sci., NS-35, 1227 (1988).

58. Y. Nishioka, K. Ohyu, Y. Ohji, N. Natuaki, K. Mukai, and T.P. Ma, `Hot-electron Hardened Si-gate MOSFET Utilizing F Implantation', IEEE Electron. Dev. Lett., EDL-10, 141 (1989).

59. Y. Nishioka, Y. Ohji, K. Mukai, T. Sugano, Y.Wang, and T.P. Ma, `Improvement in Dielectric Characteristics of Ultra-dry SiO2 by Fluorine Introduction', Appl. Phys. Lett., 54(12), 1127 (1989).

60. Y. Wang, T.P. Ma, and R.C. Barker, `Interface-trap Transformation at Radiation-Damaged (111)Si/SiO2 Interface', Appl. Phys. Lett., 54(23), 2339 (1989).

61. Y. Nishioka, K. Ohyu, Y. Ohji, N. Natuakil, K. Mukai, and T.P. Ma, `The Effect of Fluorine Implantation on the Interface Radiation Hardness of Si-gate Metal-Oxide-Semiconductor Transistors', J. Appl. Phys.,66, 3909 (1989).

62. T.H. Fedynyshyn, G.W. Grynkewich, B.A. Chen, and T.P. Ma, `The Effect of Metal Masks on the Plasma Etch Rate of Silicon', J. Electrochemical Soc., 136, 1799 (1989).

63. Y. Nishioka, K. Ohyu, Y. Ohji, and T.P. Ma, `Channel Length and width Dependence of Hot-Carrier Hardness in Fluorinated MOSFETs', IEEE Electron. Dev. Lett., EDL-10, 540 (1989).

64. Y. Wang, T.P. Ma, and R.C. Barker, `Orientation Dependence of Interface-Trap Transformation', IEEE Trans. Nuclear Science, NS-36(6), 1784 (1989).

65. Y. Nishioka, K. Ohyu, Y.Ohji, N. Natuaki, K. Mukai, and T.P. Ma, `Radiation-Hardened Si-Gate SubMicron MOSFETs with a Fluorinated Oxide', IEEE Trans. Nuclear Science, NS-36(6), 2116 (1989).

66. T.P. Ma, `Interface Trap Transformation in Radiation or Hot-Electron Damaged MOS Structures', Semicond. Sci. Technol., 4,1061 (1989).

67. E.F. da Silva, Y. Nishioka, M. Kato, and T.P. Ma, `Reliability of MOSFETs as Affected by the Interface-trap Transformation Process', IEEE Electron Dev. Lett., EDL-10, 537 (1989).

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