Ten Representative Publications
Journal Papers
Books and Book Chapters

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T.P. Ma, "Making Silicon Nitride Film A Viable Gate Dielectric", invited paper, IEEE Transactions on Electron Devices, 45(3), 680 (1998).

Xin Guo and T.P. Ma, "Tunneling Leakage Current in Oxynitride: Dependence on Oxygen/Nitrogen Content", IEEE Electron Device Letters, 19(6), 207 (1998).

Jin-Ping Han and T.P. Ma, "Electrode Dependence of Hydrogen-Induced Degradation in Ferroelectric Pb(Zr,Ti)O3 and SrBi2Ta2O9 Films", Appl. Phys. Lett., 71(9), 1267 (1997).

Ming-Horn Tsai and T.P. Ma, `The Impact of Device Scaling on the Current Fluctuations in MOSFET's' IEEE Trans. Electron Dev., ED-41(11), 2061 (1994).

T.P. Ma and Paul V. Dressendorfer, co-editors, "Ionizing Radiation Effects in MOS Devices & Circuits", (John Wiley & Sons), 1989.

T.P. Ma, "Interface Trap Transformation in Radiation or Hot-electron Damaged MOS Structures'', in Semiconductor Science and Technology, vol 4, ed. by E. Poindexter, (IOP Publishing Ltd), pp.1061-79 (1989).

Y. Nishioka, E.F. da Silva, Y.Wang, and T.P. Ma, 'Dramatic Improvement of Hot-Electron Induced Interface Degradation in MOS Structures Containing F or Cl in SiO2', IEEE Electron Device Letters, 9, 38 (1988).

V. Zekeriya and T.P. Ma, "Dependence of X-ray Generation of Interface Traps on Gate Metal Induced Interfacial Stress in MOS Structures,'' IEEE Trans. Nucl. Sci. NS-31, 1261 (1984).

T.P. Ma, G. Scoggan, and R. Leone, "Comparison of Interface-State Generation by 25-keV Electron Beam Irradiation in P-Type and N-Type MOS Capacitors,'' Appl. Phys. Lett. 27, 61 (1975).

T.P. Ma and R.C. Barker, "Surface State Spectra from Thick Oxide MOS Tunnel Junctions,'' Sol. St. Electr. {17}, 913 (1974).

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