Ten Representative Publications
Journal Papers
Books and Book Chapters

1974-1989 | 1989 - 1999 | 2000 - 2006

145. X.W. Wang, Z.J. Luo, and T.P. Ma, "High-Temperature Characteristics of High-Quality SiC MIS Capacitors with Oxide/Nitride/Oxide Gate Dielectric", IEEE Trans. on Electron Devices, 47(2), 458 (2000).

146. Y.C. Yeo, Q. Lu, W.C. Lee, T.-J. King, C. Hu, X. Wang, X. Guo, and T.P. Ma, "Direct Tunneling Gate Leakage Current in Transistors with Ultrathin Silicon Nitride Gate Dielectric", IEEE Electron Device Letters, vol.21(11), 540 (2000).

147. Lu, Y.C. Yeo, K.J. Yang, R.Lin, I. Polishchuk, T.J. King, C.Hu, S.C. Song, H.F. Luan, D.L. Kwang, X.Guo, Z.Luo, X.Wang, and T.P. Ma, "Two Silicon Nitride Technologies for Post-SiO2 MOSFET Gate Dielectric", IEEE Electron Device Letters, vol.22(7), 321 (2001).

148. Gaffey, L.J. Guido, X.W. Wang, and T.P. Ma, "High-Quality Oxide/Nitride/Oxide Gate Insulator for GaN MIS Structures", IEEE Trans. on Electron Devices, vol.48(3), 458 (2001).

149. Ashot Melik-Martirosian and T.P. Ma, "Lateral Profiling of Interface Traps and Oxide Charge in MOSFET Devices: Charge Pumping versus DCIV", IEEE Transactions on Electron Devices, vol.48(10), 2303 (2001).

150. Z.J. Luo, Xin Guo, T.P. Ma, and T. Tamagawa, "Temperature Dependence of Gate Currents in Thin Ta2O5 and TiO2 Films", Appl. Phys. Lett., 79(17), 2803 (2001).

151. Min She, Tsu-Jae King, Chenming Hu, Wenjuan Zhu, Zhijiong Luo, Jin-Ping Han and T.P. Ma, "JVD Silicon Nitride as P-Channel Flash Memory with JVD Silicon Nitride as Tunnel Dielectric", IEEE Electron Device Letters, vol.23(2), 91 (2002).

152. W. Zhu, T.P. Ma, T. Tamagawa, Y.Di, and J. Kim, "Current Transport in Metal/Hafnium Oxide/Silicon Structure", IEEE Electron Device Letters, vol.23(2), 97 (2002).

153. Kwang-Ho Kim, Jin-Ping Han, Soon-Won Jung, and Tso-Ping Ma, "Ferroelectric DRAM (FEDRAM) FET with Metal/SrBi2Ta2O9/SiN/Si Gate Structure" IEEE Electron Device Letters, vol.23(2), 82 (2002).

154. T.P. Ma and Jin-Ping Han, "Why is Nonvolatile Ferroelectric Memory Field-Effect Transistor Still Elusive?", IEEE Electron Device Letters, vol.23(7), 386 (2002).

155. W..J. Zhu, S. Zafar, T. Tamagawa and T.P. Ma, "Charge Trapping in Ultra-thin Hafnium Oxide", IEEE Electron Device Letters. vol.23(10), 597 (2002).

156. W. Zhu, T. Tamagawa, M.Gibson, T. Furukawa, and T.P. Ma, "Effect of Al inclusion in HfO2 on the physical and Electrical Properties of the Dielectrics", IEEE Electron Device Letters, vol.23(11), 649 (2002).

157. T.P. Ma, “Gate Dielectrics for Si, SiC, and GaN as Synthesized by Jet Vapor Deposition”, Microelectronics Journal, vol.34, 363 (2003).

158. Wei He and T.P. Ma, “Inelastic Electron Tunneling Spectroscopy Study of Ultra-thin HfO2 and HfAlO”, Appl. Phys. Letters, vol.83(13), 2605 (2003).

159. Wei He and T.P. Ma, "Inelastic Electron Tunneling Spectroscopy Study of Traps in Ultra-thin High-k Gate Dielectrics", Appl. Phys. Letters. Vol 83(26), 5461 (2003).

160. J. Zhu, J.P. Han, and T.P. Ma, “Mobility Measurement and Degradation Mechanisms of MOSFETs Made with Ultra-Thin High-k Dielectrics, IEEE Trans. Electron Devices, Vol.ED-51, No.1, pp.98-105 (2004).

161. W.J. Zhu and T.P. Ma, “Temperature Dependence of Channel Mobility in HfO2-Gated NMOSFET’s”, IEEE Electron Device Letters, Vol.25, No.2, pp.89-91 (2004).

162. Zhijiong Luo and T.P. Ma, “A New Method to Extract EOT of Ultra-thin Gate Dielectric with High Leakage Current”, IEEE Electron Device Letters, Vol.25, No.9, pp.655-657 (2004).

163. T. P. Ma, H.M. Bu, X.W. Wang, L.Y. Song, W. He, M.M. Wang, H.-H.Tseng, and P. J. Tobin, “Special Reliability Features for Hf-based High-k Gate Dielectrics”, IEEE Transactions on Device and Materials Reliability, Vol.5, No.1, pp.36-44 (2005).

164. Miaomiao Wang, Wei He, and T.P. Ma, “Electron Tunneling Spectroscopy Study of Traps in High-k Gate Dielectrics: Determination of Physical Locations and Energy Levels of Traps”, Applied Physics Letters, 86(19), 192113 (2005).

165. X.W. (Sharon) Wang, Liyang Song, Huiming Bu, and T.P. Ma, “Charge Trapping - A Major Reliability Challenge for High-k Gate Dielectrics”, Journal of Electrochemical Society, (2005).

166. P.F. Hsu, Y.T. Hou, F.Y. Yen, V.S. Chang, P.S. Lim, C.L. Hung, L.G. Yao, J.C. Jiang, H.J. Lin, J.M. Chiou, K.M. Yin, J.J. Lee, R.L. Hwang, Y. Jin, S.M. Chang, H.J. Tao, S.C. Chen, T.P. Ma, and M.S. Liang, "Advanced Dual Metal Gate MOSFETs with High-k Dielectric for CMOS Application", VLSI-TSA Technical Digest, Taipei, Taiwan, April 24-26 (2006)

167. M. Wang, W. He, T.P. Ma, L.F. Edge, and D.G. Schlom, "Electron tunneling spectroscopy study of amorphous films of the gate dielectric candidates LaAlO3 and LaScO3", Appl. Phys. Lett. 90, 053502 (2007)

168. T.P. Ma, "Electrical Characterization of Advanced Gate Dielectrics", ECS Trans. 6, (3) 655 (2007).

169. Liyang Song, Xiewen Wang, Dechao Guo, and T.P. Ma, "Effective Capture Cross-Sections of Traps in High-k Gate Dielectrics" ECS Trans. 6, (1) 229 (2007)

170. T.P. Ma, "Electrical Characterization of Advanced Gate Dielectrics for Scaled CMOS Technology", ECS Trans. 8, (1) 93 (2007)

171. J.F. Zheng, W. Tsai, T. D. Lin, Y. J. Lee, C. P. Chen, M. Hong, J. Kwo, S. Cui, and T.P. Ma, "Ga2O3(Gd2O3)/Si3N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion", Appl. Phys. Lett. 91, 223502 (2007)

172. S. J. Robinson, C. L. Perkins, T.-C. Shen, J. R. Tucker, T. Schenkel, X. W. Wang, and T. P. Ma, "Low-temperature charge transport in Ga-acceptor nanowires implanted by focused-ion beams", Appl. Phys. Lett. 91, 122105 (2007)

173. Chun-Chen Yeh, T.P. Ma, Nirmal Ramaswamy, Noel Rocklein, Dan Gealy, Thomas Graettinger, and Kyu Min, "Frenkel-Poole trap energy extraction of atomic layer deposited Al2O3 and HfxAlyO thin films", Appl. Phys. Lett. 91, 113521 (2007)

174. W. P. Li, X. W. Wang, Y. X. Liu, S. I. Shim, and T. P. Ma, "Demonstration of unpinned GaAs surface and surface inversion with gate dielectric made of Si3N4", Appl. Phys. Lett. 90, 193503 (2007)

175. Harris, H. Rusty Kalra, Pankaj Majhi, Prashant Hussain, Muhammed Kelly, David Oh, Jungwoo He, Dawei Smith, Casey Barnett, Joel Kirsch, Paul D. Gebara, Gabriel Jur, Jess Lichtenwalner, Daniel Lubow, Abigail Ma, T.P. Sung, Guangyu Thompson, Scott Lee, Byoung Hun Tseng, Hsing-Huang Jammy, Raj, "Band-Engineered Low PMOS VT with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme", 2007 IEEE Symposium on VLSI Technology, pp.154-5, June (2007)

176. Sharon Cui, Ning Li, Jun Fei Zheng, Sunil Shim, and T.P. Ma , "Gate Quality Al2O3 by Molecular-Atomic-Deposition (MAD) and its Potential Applications in III-V Semiconductor CMOS Technology", ECS Trans. 6, (1) 321 (2007)

177. Sun Il Shim, Frank C. Yeh, X. W. Wang and T. P. Ma, "SONOS-type Flash Memory Cell with Metal-Al2O3-SiN-Si3N4-Si Structure for Low Voltage High Speed Program/Erase Operation", IEEE Electron Device Letters, 29(5), 512 (2008)

178. Yanxiang Liu, Sun Il Shim, X.W. Wang, Lurng-Shehng Lee, Ming-Jinn Tsai, and T.P. Ma, "High-quality High-k HfON Formed with Plasma Jet Assisted PVD Process and Application as Tunnel Dielectric for Flash Memories", Microelectronics Enginering, Vol.85, pp.45~48, (2008)

179. X. Sun, L.F. Liu, B. Gao, B. Sun, J.Q. Yang, N.Xu, X.Y. Liu, R.Q. Han, J.F. Kang , G.J. Lian, G.C. Xiong, and T.P. Ma, "Resistive switching and its mechanisms in CeOx films for nonvolatile memory application", submitted to Appl. Phys. Letts.

180. Jun-Fei Zheng, Wilman Tsai, Weipeng Li, Xiewen Wang, and T. Ma, "Demonstration of Enhancement-Mode GaAs MISFET with Channel Inversion using Si3N4 as Gate Dielectric", submitted to Appl. Phys. Letts.

181. Chun-Chen Yeh, Karl Holtzclaw, Nirmal Ramaswamy, Srivardhan Gowda, Rhett Brewer, Thomas Graettinger, Kyu Min, Chandra Mouli, Krishna Parat, and T.P. Ma, "Time-Resolved Programming Current Measurement and Modeling for NAND-type Nanodot Flash Cell", submitted to IEEE Electron Device Letters.

182. W.F. Li, J. Kang, X. Liu, G. Du, R. Han, Y. Wang, T. P. Ma, "A new macro-model for the transfer characteristics of ferroelectric field effect transistor", submitted to IEEE Trans. Electron Dev.

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