Miaomiao Wang
Graduate Student, Research Assistant

Becton Center #314
Department of Electrical Engineering
Yale University
New Haven, CT 06520
Lab phone: 203-432-4207
Email: miaomiao.wang@yale.edu

Research Summary

My research area is inelastic electron tunneling spectroscopy (IETS). With the scaling down of MOS system, IETS distinguishes itself as a highly sensitive analysis tool capable of revealing the structure of ultra-thin gate dielectrics. IETS measured on Al/HfO2/Si revealed Hf-O phonons indicating a monoclinic structure of HfO2 at 4.2K. In addition,electron tunneling spectroscopy can also exhibit the changes of positions and energy levels of traps in high-k gate dielectrics caused by electrical stress. Now, we are trying to apply IETS to MOS transistors and various promising High-K gate dielectrics. Our recent spectra from Al/LaAlO3/Si show LaAlO3’s advantage of having no interfacial SiO2 layer.