Hironori Tsukamoto
Sr. Research Scientist

Department of Electrical Engineering
Yale University
New Haven, CT 06520
Lab phone: 203-432-4304
Fax: 203-432-6420
Email: hironori.tsukamoto@yale.edu

Research Summary

Before joining Yale, I have worked on research in area of silicon and compound semiconductor materials/devices at Sony Research Center for ten years: selective laser annealing, process integration of sub-100nm MOSFETs, InGaAs HEMTs for RF devices, design of heterostructure semiconductor laser, MBE crystal growth, characterization of opto-electronic materials and devices. I am interested in solid-state physics, material/process physics, and device physics: electron-phonon interactions in semiconductors, kinetics of crystal defect generation, low power operational component devices for network (optical switch, highly scaled memory structures), modeling of nanowire growth, laser crystallization of thin film, modeling of semiconductor devices.

I am currently working on projects in groups of Prof. Ma, Prof. Reed and Prof. Han: kinetics of Jet Vapor Deposition, nanowier manipulating technique, emission packet positioning in heterostructure devices.

Membership: Senior Member of IEEE, American Physical Society, American Chemical Society, Material Research Society.

Patents filed: 66 + 3 pending patents (in U.S.A., Europe, and Japan)

Selected publications

“Optical Signal Routing using Emission Packet Positioning of Semiconductor Heterostructure,” H. Tsukamoto, T. Boone, J. Han, and J. Woodall, IEEE Photon. Technol. Lett.. (in press, July 2005).

“Catalytic growth of group III-nitride nanowires and nanostructures by metal-organic chemical vapor deposition,” J. Su, G. Cui, M. Gherasimova, H. Tsukamoto, J. Han, D. Ciuparu, S. Lim, L. Pfefferle, Y. He, A. V. Nurmikko, C. Broadbridge, and A. Lehman, Appl. Phys. Lett. 86, 013105 (2005).

“Optical signal routing device designed with compound semiconductor heterostructure,” H. Tsukamoto, T. D. Boone, and J. M. Woodall, Integrated Photonics Research Topical Meetings (The Optical Society of America, Washington, DC, 2004), IthB4

“Solid-State Optical Routing Device Utilizing Minority Carrier Drift,” H. Tsukamoto, T. D. Boone, and J. M. Woodall, Ext. Abstra. Int. Conf. Solid State Devices and Materials 2003, 184(2003).

“Intensity and spatial modulation of spontaneous emission in GaAs by field aperture selecting transport,” T. D. Boone, H. Tsukamoto, and J. M. Woodall, Appl. Phys. Lett. 82, 3197 (2003).

“The correlation of defect profiles with carrier profiles of InAs epilayers on GaP,” H. Tsukamoto, E.-H. Chen, V. Gopal, and J. M. Woodall, Appl. Phys. Lett. 78, 952 (2001).

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