T.P. Ma
Raymond John Wean Professor
Dept. of Electrical Engineering
Yale University
New Haven, CT 06520-8284
Phone: 203-432-4211
Fax: 203-432-7769
Email: t.ma@yale.edu
 

Ten Representative Publications
Journal Papers
Books and Book Chapters

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1. T.P. Ma, “Tunnel Dielectrics for Scaled Flash Memory Cells”, Book Chapter for the book “Flash Memory Technologies” (edited by J. Brewer and M. Gill) to be published by IEEE Press.

2. T.P. Ma and Paul V. Dressendorfer, co-editors, "Ionizing Radiation Effects in MOS Devices & Circuits", (John Wiley & Sons), 1989.

3. T.P. Ma, "Interface Trap Transformation in Radiation or Hot-electron Damaged MOS Structures'', in Semiconductor Science and Technology, vol 4, ed. by E. Poindexter, (IOP Publishing Ltd), pp.1061-79 (1989).

4. T.P. Ma, Y. Nishioka, and E. da Silva, Jr., "Defect Transformation Process at SiO2/Si Interface'', in The Physics and Chemistry of SiO2 and Si-SiO2 Interface, ed. by C. R. Helms and B. E. Deal, (Plenum Publishing Corporation), 1988.

5. C.T. Sah, et.al, "Insulator Layers on Silicon Substrates", Chapter 17 in Properties of Silicon, EMIS Datareview Series, No.4, (INSPEC),(1987).

6. T.P. Ma, "Ionizing Radiation Effects in SiO2 and RF Plasma Annealing'', in Semiconductor Silicon 1981, ed. by H. Huff, R. Kriegler, and Y. Takeishi, (the Electrochemical Society, Inc.), 1981

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