Selected Publications

    2010

  1. Y. Zhang, S.-W. Ryu, C. D. Yerino, B. Leung, Q. Sun, Q. Song, H. Cao, and J. Han; A conductivity-based selective etching for next generation GaN devices, Physica Status Solidi (a) accepted (2010).

  2. A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, T. G. Yugova, E. A. Petrova, Q. Sun, Y. Zhang, C. D. Yerino, T.-S. Ko, I.-H. Lee, and J. Han; Electrical properties and deep traps spectra of a-plane GaN films grown on r-plane sapphire, Materials Science and Engineering B in press (2010).

  3. A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Q. Sun, Y. Zhang, Y. S. Cho, I.-H. Lee, and J. Han; Electrical and luminescent properties and deep traps spectra of N-polar GaN films, Materials Science and Engineering B 166, 83 (2010).

  4. C. D. Yerino, Q. Sun, T.-S. Ko, Y. S. Cho, I.-H. Lee, and J. Han; Origin of surface pits and striations on non-polar a-plane GaN, under review.

    5. 2009

  5. Q. Sun, B. H. Kong, C. D. Yerino, T.-S. Ko, H. K. Cho, and J. Han; Morphological and microstructural evolution in the two-step growth of nonpolar a-plane GaN on r-plane sapphire, J. Appl. Phys. 106, 123519 (2009).

  6. Q. Sun, B. Leung, C. D. Yerino, Y. Zhang, and J. Han; Improving microstructural quality of semipolar (1122) GaN on m-plane sapphire by a two-step growth process, Appl. Phys. Lett. 95, 231904 (2009).

  7. Y.-L. Wang, B. H. Chu, C. Y. Chang, K. H. Chen, Y. Zhang, Q. Sun, J. Han, S. J. Pearton, and F. Ren; >Hydrogen sensing of N-polar and Ga-polar GaN Schottky diodes, Sensors and Actuators B: Chemical 142, 175 (2009).

  8. C. Y. Chang, Y.-L. Wang, B. P. Gila, A. P. Gerger, S. J. Pearton, C. F. Lo, F. Ren, Q. Sun, Y. Zhang, and J. Han; Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors, Appl. Phys. Lett. 95, 082110 (2009).

  9. Y.-L. Wang, F. Ren, U. Zhang, Q. Sun, C. D. Yerino, T. S. Ko, Y. S. Cho, I. H. Lee, J. Han, and S. J. Pearton; Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes, Appl. Phys. Lett. 94, 212108 (2009).

  10. Q. Sun, C. D. Yerino, Y. Zhang, Y. S. Cho, S.-Y. Kwon, B. H. Kong, H. K. Cho, I.-H. Lee, and J. Han; Effect of NH3 flow rate on m-plane GaN growth on m-plane SiC by metalorganic chemical vapor deposition, J. Cryst. Growth 311, 3824 (2009).

  11. Q. Sun, T.-S. Ko, C. D. Yerino, Y. Zhang, I.-H. Lee, J. Han, T.-C. Lu, H.-C. Kuo, and S.-C. Wang; Effect of controlled growth dynamics on the microstructure of nonpolar a-plane GaN revealed by x-ray diffraction, Jpn. J. Appl. Phys. 48, 071002 (2009).

  12. H. Kim, Q. Zhang, Y.-K. Song, A. Nurmikko, Q. Sun, and J. Han; Nitride-organic hybrid heterostructures for possible novel optoelectronic devices: charge injection and transport, Physica Status Solidi (c) 6, 593 (2009).

  13. Q. Sun, Y. S. Cho, B. H. Kong, H. K. Cho, T.–S. Ko, C. D. Yerino, I.-H. Lee, and J. Han; N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition, J. Cryst. Growth 311, 2948 (2009).

    14. 2008

  14. Q. Sun, C. D. Yerino, T. S. Ko, Y. S. Cho, I.–H. Lee, J. Han, and M. E. Coltrin; Understanding non-polar GaN growth through kinetic Wulff plots, J. Appl. Phys. 104, 093523 (2008).

  15. Q. Sun, Y. S. Cho, I.–H. Lee, J. Han, B. H. Kong, and H. K. Cho; Nitrogen-polar GaN growth evolution on c-plane sapphire, Appl. Phys. Lett. 93, 131912 (2008).

  16. Y. S. Cho, Q. Sun, I.-H. Lee, T.-S. Ko, C. D. Yerino, J. Han, B. H. Kong, H. K. Cho, and S. Wang; Reduction of stacking fault density in m-plane GaN grown on SiC, Appl. Phys. Lett. 93, 111904 (2008).

  17. Q. Sun, S.-Y. Kwon, Z. Y. Ren, J. Han, T. Onuma, S. F. Chichibu, and S. Wang; Microstructural evolution in m-plane GaN growth on m-plane SiC, Appl. Phys. Lett. 92, 051112 (2008).

    18. 2007

  18. S.-Y. Kwon, Z. Ren, Q. Sun, J. Han, Y.-W. Kim, E. J. Yoon, B. H. Kong, and H. K. Cho; Observation of oxide precipitates in InN nanostructures, Appl. Phys. Lett. 91, 234102 (2007).

  19. Z. Ren, Q. Sun, S. Y. Kwon, J. Han, K. Davitt, Y. K. Song, A. V. Nurmikko, H.–K. Cho, W. Liu, J. A. Smart, and L. J. Schowalter; Heteroepitaxy of AlGaN on bulk AlN substrates for deep ultraviolet light emitting diodes, Appl. Phys. Lett. 91, 051116 (2007).

  20. Z. Ren, Q. Sun, S.-Y. Kwon, J. Han, K. Davitt, Y. K. Song, A. V. Nurmikko, W. Liu, J. A. Smart, and L. J. Schowalter; AlGaN deep ultraviolet LEDs on bulk AlN substrates, Physica Status Solidi (c) 4, 2482 (2007).

  21. K. Davitt, Y.-K. Song, W. Patterson, A. V. Nurmikko, Z. Ren, Q. Sun, and J. Han; UV LED arrays at 280 and 340 nm for spectroscopic biosensing, Physica Status Solidi (a) 204, 2112 (2007).

  22. T. Henry, K. Kim, Z. Ren, C. Yerino, J. Han, H. X. Tang; Directed growth of horizontally aligned gallium nitride nanowires for nanoelectromechanical resonator arrays, Nano Lett. 7, 3315 (2007).

  23. K Kim, T. Henry, G. Cui, J. Han, Y.–K. Song, A. V. Nurmikko, H. X. Tang; Epitaxial growth of aligned GaN nanowires and nanobridges, Phys. Status Solidi B 244, 1810 (2007).

    24. 2004-2006

  24. S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. Denbaars, J. S. Speck, U.K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota , Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors, Nature Materials 5, 810 (2006).

  25. J. Su, M. Gherasimova, G. Cui, H. Tsukamoto, J. Han, T. Onuma, M. Kurimoto, S. F. Chichibu, C. Broadbridge, A. Lehman, Y. He, and A. V. Nurmikko, Growth of AlGaN nanowires by Metal-Organic Chemical Vapor Deposition, Appl. Phys. Lett. 87, 183108 (2005).

  26. K. Davitt, Y.–K. Song, W. R. Patterson III, A. V. Nurmikko, M. Gherasimova, J. Han, Y.–L. Pan, R. K. Chang, 290 and 340 nm UV LED arrays for fluorescence detection from single airborne particles, Optics Express 13, 9548 (2005).

  27. Y. He; Y. K. Song; A. V. Nurmikko; J. Su; M. Gherasimova; G. Cui; J. Han; Optically pumped ultraviolet AlGaInN quantum well laser at 340 nm wavelength, Appl. Phys. Lett. 84, 463 (2004).

  28. M. Gherasimova; G. Cui; S. R. Jeon; Z. Ren; D. Martos; J. Han; Y. He; A. V. Nurmikko; Droplet heteroepitaxy of GaN quantum dots by metal-organic chemical vapor deposition, Appl. Phys. Lett. 85, 2346 (2004).