Facilities at Yale University
MOCVD and CVD Synthesis (Han)
A dedicated commercial MOCVD system (Aixtron 200/4 RF) is used for the growth of AlGaInN materials for optoelectronics, microelectronics, and nanosynthesis. The reactor is equipped with six metalorganic precursors and three hydride sources. A hot wall, flow-tube reactor is used for the synthesis of GaN nanowires and CVD-polymerization of conjugated organic semiconductors.
Optoelectronic Characterization (Han)
Multiple cryogenic and high magnetic field facilities exist in the lab. UV photoluminescence setup with laser excitation at 263nm (from a frequency-quadrupled solid state source) and 325 nm (HeCd laser). Variable-temperature probe station (MMR) setup for I-V, electroluminescence, and optical power measurement. Variable temperature Hall measurement is available for transport measurement.
Device Fabrication Lab (shared)
Full microelectronic processing facilities exist, including multiple vacuum evaporators, process furnaces, standard photolithography and wet chemical processing, PECVD, 2 Oxford reactive ion etchers (one fluorine-based and one ICP for chlorine-based), and fabrication characterization in a shared-use class 100/1000 cleanroom complex occupying a 3000 sq-ft contiguous area, for both silicon and III-V semiconductor processing. On site characterization includes inspection SEMs, EDX, AFM.
Material Characterization (shared)
Multiple device characterization laboratories exist, including a dedicated MOS characterization lab with a wide assortment of probe stations, semiconductor parameter analyzers, and techniques (I/G/C-V, DLTS) are available. Nanoscale structures are probed by FTIR Spectrometer (Nicolet Nexus 870), NSOM System, field-emission SEM, High-resolution transmission electron microscopy (TEM) and electron diffraction (ED) (FEI Tecnai 20 Field Emission TEM at Trinity College, JEOL 200 at Yale Medical School), scanning energy dispersive x-ray spectrometry (EDS) (Philips CM-12 TEM.), A triple-axis x-ray diffractometer (Bede D-1) is available for microstructural analysis.