LOUIS J. GUIDO Associate Professor of Electrical Engineering and Applied Physics Ph.D. 1989, University of Illinois E-mail: louis.guido@yale.edu Phone: 1 (203) 432-4304 Fax: 1 (203) 432-7769

My research focuses on problems at the boundaries of materials science, semiconductor physics, and optical physics. I encourage a team approach to research in which small groups, each with their own focus, interact to bring their individual talents to bear on broadly defined multidisciplinary problems. In the ideal situation, each research group would consist of one graduate student, one undergraduate student, one high school student, and me. Within this framework, and with considerable input from the students, I attempt to establish a flexible working environment in which the students pursue different aspects of these problems as their interests evolve and their talents develop. I redefine the "long-term" research thrust areas about every five years. My present research group consists of four graduate students, one undergraduate student, and one high school student. These students have access to a wide range of experimental facilities, within the Center for Microelectronic Materials and Structures (µELM) of which I am a Founding Member. The Center has a bulk crystal growth laboratory, a metalorganic chemical vapor deposition laboratory, a microfabrication clean-room facility, a nanostructure fabrication laboratory, an electronic characterization laboratory, and an optical characterization laboratory. Currently, we are investigating nucleation phenomena and the kinetics of epitaxial crystal growth; self-diffusion, interdiffusion, and impurity diffusion phenomena in solids; synthesis of group III nitride semiconductor alloys, heterostructures, and quantum wells; and the physics of photonic devices operating at extremely short (UV) and long (FIR) wavelengths.

Selected Publications

"Cation Vacancy Formation and Migration in the AlGaAs Heterostructure System," Appl.Phys. Lett., 73, 24 (1998).

"Electronic Properties of Arsenic-doped Gallium Nitride," L.J. Guido, P. Mitev, M. Gherasimova, and B. Gaffey, Appl. Phys. Lett., 72, 2005 (1998).

"Evidence of Two-Species Nucleation of InAs on (100) and (111)B GaAs Substrates,"  R.E. Welser and L.J. Guido, Appl. Phys. Lett. 68, 912 (1996).

"Visible-Wavelength Surface-Emitting LEDs with a 15-fold Improvement in Electrical-to-Optical Power Conversion Efficiency," K.J. Thomas, L.J. Guido, J.C. Beggy, S. Smith, and R.D. Burnham, Appl. Phys. Lett., 66, 127 (1995).

Updated: 12/16/98