CHARLES H. AHN
Associate Professor of Applied Physics and Physics
Ph.D. 1996, Stanford University
E-mail: charles.ahn@yale.edu
Phone: 203/432-6421
Fax: 203/432-4283
Office: Becton Center 303

Prof.
Ahn is the Director of Undergraduate Studies in Applied Physics
 
My focus is on novel materials, molecular beam epitaxy, physics and technology of ferroelectric films, including nanofabrication and "writing" with atomic force microscopy; control of carrier density in superconductors and semiconductors with ferroelectric gates.

Selected Publications

"Electrostatic Tuning of NdBa
2Cu3O7 Films and its Effect on the Hall Response," S. Gariglio, D. Matthey, C.H. Ahn, J.-M. Triscone, Physical Review Letters, 88, 067002 (2002). 

"Epitaxial Growth of Pb(Zr0.2Ti0.8)O
3 on Si and Its Nanoscale Piezoelectric Properties," A. Lin, X. Hong, V. Wood, A. Verevkin, C.H. Ahn, R.A. McKee, F.J. Walker, E.D. Specht, Applied Physics Letters, 78, 2034 (2001).

"Electrostatic Modulation of Superconductivity in Ultrathin GdBa
2Cu3O7-x Films," C.H. Ahn, S. Gariglio, P. Paruch, T. Tybell, L. Antognazza, J.-M. Triscone, Science, 284, 1152 (1999).

"Local, Nonvolatile Electronic Writing of Epitaxial Pb(Zr0.52Ti0.48)O
3/SrRuO3 Heterostructures," C.H. Ahn, T. Tybell, L. Antognazza, K. Char, R.H. Hammond, M. R. Beasley, Ø. Fischer, J.-M. Triscone, Science, 276, 1100 (1997).

Updated: 9/5/03