Syllabus:
EE 320a, E&AS 865a Syllabus
EE 320a, E&AS 865a
Physical Electronics
Fall Term 1997
Richard C. Barker
Becton Center 525
Tel: 432-4308, FAX: 432-7769
1993 Yale College Catalog Data:
EE 320a: Physical Electronics. 4 hrs. The physics, characteristics,
and technology of semiconductor devices:p-n junctions in their many forms,
bipolar and field-effect transistors and related devices, LEDs, lasers,
and structures suitable for integrated circuits. The course leads to EE
321b and 325b. Seven laboratory sessions.
Textbooks:
- Primary: B.G. Streetman, Solid State Electronic Devices,
4th Edition, Prentice Hall 1972;
- Reference: R.S. Muller, T.I. Kamins, Device Electronics for
Integrated Circuits; (this book is the primary text for EE321b, Solid
State Devices and Microelectronics)
Goals:
The course is designed to develop intuitive concepts and the ability
to deal quantitatively with the principles of physical electronics. A
limited
range of solid-state electronic devices is used as the vehicle for
developing
these ideas and making them useful for analysis and design.The course
leads
into other courses in electronic circuits, instrumentation, computers,
and integrated circuit design. The course features close interaction with
the Instructor, and many special hand-outs that complement the lectures
and supplement the reading.
Prerequisites by Topic:
- Physics at the normal level expected of sophomores
- Ordinary differential equations at an elementary level
- Some elementary electrical and electronic circuit concepts
Catch-up notes have been prepared for students missing one or the other
of several possible topics, eg, vectors, vector differential operators,
elementary quantum mechanics, plane waves, electric fields, dielectrics,
and capacitance.
Topics:
- Objectives and overview.
- Quantum mechanical description of electrons in free space and in a
crystal lattice.
- Semiconductor crystals: structure, binding, electrons, holes.
- Carrier generation, recombination, doping, equilibrium, nonequilibrium
states and continuity principles.
- The Fermi Dirac distribution and its use in calculating carrier
concentrations,
thermoelectric effects.
- Carrier drift, diffusion, impurity and phonon scattering.
- The minority carrier diffusion equation, PN junction properties.
- Avalanche, tunneling, punch-through leading to tunnel diodes, Zenner
diodes, varactors, snap diodes, breakdown mechanisms.
- The PN junction diode and solar cell.
- The Bipolar Junction Transistor.
- The MOS Field Effect Transistor (MOSFET).
- Light emitting diodes, junction lasers.
Laboratory Projects:
- Semiconductor energy gap and the temperature dependence of
conductivity.
- Carrier type and conductivity; Hall effect.
- Haynes Schockley experiment on minority carrier diffusion.
- P-N junction charactarization.
- Solar cells.
- Thermoelectric devices.
- Electronic properties of a variety of devices: tunnel, Zener,
switching,
varactor, Schottky diodes; PNP, NPN, photo, unijunction, field effect
transistors;
triac, SCR, NPN Darlington power control devices.