Welcome to the website of the lab of Charles H. Ahn, William K. Lanman Jr. Professor of Applied Physics, Physics and of Mechanical Engineering and Materials Science

 

Research

Our research lab focuses on the growth and characterization of strongly correlated oxide films and heterostructures and on the fabrication of devices based on these structures. Current areas of investigation include: (i) electric field effects, (ii) multifunctional materials, (iii) high-κ dielectric materials, and (iv) applications in spintronics.

Field effects

Field effects can be employed to modify the electronic properties of materials, a concept that underpins the ubiquitous role of semiconductors in modern electronics. (More details...)

Multiferroic materials

Multiferroics are materials that display simultaneous ferroelectric and magnetic ordering. (More details...)

Spintronics

Spintronics involves the control and manipulation of the spin degrees of freedom in materials. (More details...)

High-κ dielectrics

The search for high-κ dielectrics is closely linked with the search for gate dielectric alternatives to silicon dioxide for next generation electronics devices. (More details...)